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Paper Titles
A Shallow Acceptor Complex in 4H-SiC: AlSiNCAlSi
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Electronic Structure of Twin Boundaries in 3C-SiC, Si and Diamond
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Electronic Properties of Stacking Faults in 15R-SiC
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A Cause for SiC/SiO2 Interface States: the Site Selection of Oxygen in SiC
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Angle-Resolved Studies of SiO2/SiC Samples
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Positron Annihilation Studies of Defects at the SiO2/SiC Interface
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A Study of the Shallow Electron Traps at the 4H-SiC/SiO2 Interface
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Traps at the Interface of 3C-SiC/SiO2-MOS-Structures
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Study of the Wet Re-Oxidation Annealing of SiO2/4H-SiC (0001) Interface Properties by AR-XPS Measurements
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Angle-Resolved Studies of SiO2/SiC Samples

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

539-542

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.539

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Online since:

September 2003

Authors:

Leif I. Johansson, Charíya Virojanadara, Th. Eickhoff, W. Drube

Keywords:

Angle-Resolved Photoemission Studies, Oxidation States, SiO2 Shift, SiO2/SiC

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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