Traps at the Interface of 3C-SiC/SiO2-MOS-Structures

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

551-554

Citation:

F. Ciobanu et al., "Traps at the Interface of 3C-SiC/SiO2-MOS-Structures", Materials Science Forum, Vols. 433-436, pp. 551-554, 2003

Online since:

September 2003

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[1] G. Pensl, M. Bassler, F. Ciobanu, V. Afanas'ev. H. Yano, T. Kimoto, H. Matsunami, Mat. Res. Soc. Symp. Proc. Vol. 640, (2001), p. H3. 2.

[2] H. Nagasawa, T. Kawahara, K. Yagi, Mater. Sci. Forum Vol. 389-393 (2002), p.319.

[3] A. Schöner, A. Konstantinov, S. Karlsson, R. Berge, Mater. Sci. Forum Vol. 389-393 (2002), p.187.

[4] M. Bassler, G. Pensl, V. Afanas'ev, Diamond and Rel. Mater. Vol. 6 (1997), p.1472.

[5] S. Reshanov, O. Klettke, G. Pensl, see these Conference Proceedings. p-type 3C-SiC T (K) 100 200 300 400 500 C/COX.

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40 #4/p #6/p Al RE X(C) Fig. 4. Admittance spectra of samples #4/p (solid curves) and #6/p (dashed curves) taken in accumulation at 1kHz. E-EV (eV).

00. 51. 01. 52. 02. 53. 03. 5 Dit (cm-2eV-1) 1011 1012 1013 EC(3C) EC(4H) 4H-SiC 3C-SiC #6/n, #6/p Fig. 5. Interface state density Dit as a function of energy for identically processed (001)-face 3C-SiC and (11-20)-face 4H-SiC MOS capacitors.

DOI: https://doi.org/10.3384/diss.diva-132408

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