Paper Titles

A Cause for SiC/SiO₂ Interface States: the Site Selection of Oxygen in SiC
p.535

Angle-Resolved Studies of SiO₂/SiC Samples
p.539

Positron Annihilation Studies of Defects at the SiO₂/SiC Interface
p.543

A Study of the Shallow Electron Traps at the 4H-SiC/SiO₂ Interface
p.547

Traps at the Interface of 3C-SiC/SiO₂-MOS-Structures
p.551

Study of the Wet Re-Oxidation Annealing of SiO₂/4H-SiC (0001) Interface Properties by AR-XPS Measurements
p.555

Structural Defects at SiO₂/SiC Interfaces Detected by Positron Annihilation
p.559

Reduction of Interface Trapped Density of SiO₂/4H-SiC by Oxidation of Atomic Oxygen
p.563

High Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(000-1) Face Using H₂ Post-Oxidation Annealing
p.567

HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Traps at the Interface of...

Traps at the Interface of 3C-SiC/SiO₂-MOS-Structures

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 2002

Info:

Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

551-554

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.551

Citation:

Cite this paper

Online since:

September 2003

Authors:

Florin Ciobanu, Gerhard Pensl, Hiroyuki Nagasawa, Adolf Schöner, Sima Dimitrijev, K.Y. Cheong, Valeri V. Afanas'ev, Günter Wagner

Keywords:

3C-SiC/SiO2 MOS Capacitor, Admittance Spectroscopy, Conductance Method, Density of Interface States

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2003 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] G. Pensl, M. Bassler, F. Ciobanu, V. Afanas'ev. H. Yano, T. Kimoto, H. Matsunami, Mat. Res. Soc. Symp. Proc. Vol. 640, (2001), p. H3. 2.

[2] H. Nagasawa, T. Kawahara, K. Yagi, Mater. Sci. Forum Vol. 389-393 (2002), p.319.

[3] A. Schöner, A. Konstantinov, S. Karlsson, R. Berge, Mater. Sci. Forum Vol. 389-393 (2002), p.187.

[4] M. Bassler, G. Pensl, V. Afanas'ev, Diamond and Rel. Mater. Vol. 6 (1997), p.1472.

[5] S. Reshanov, O. Klettke, G. Pensl, see these Conference Proceedings. p-type 3C-SiC T (K) 100 200 300 400 500 C/COX.

0.

2.

4.

6.

8.

[1] 0 G/COXωωωω.

00.

05.

10.

15.

20.

25.

30.

35.

40 #4/p #6/p Al RE X(C) Fig. 4. Admittance spectra of samples #4/p (solid curves) and #6/p (dashed curves) taken in accumulation at 1kHz. E-EV (eV).

00. 51. 01. 52. 02. 53. 03. 5 Dit (cm-2eV-1) 1011 1012 1013 EC(3C) EC(4H) 4H-SiC 3C-SiC #6/n, #6/p Fig. 5. Interface state density Dit as a function of energy for identically processed (001)-face 3C-SiC and (11-20)-face 4H-SiC MOS capacitors.

DOI: 10.1063/5.0090083