Study of the Wet Re-Oxidation Annealing of SiO2/4H-SiC (0001) Interface Properties by AR-XPS Measurements

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

555-558

DOI:

10.4028/www.scientific.net/MSF.433-436.555

Citation:

A. Ekoué et al., "Study of the Wet Re-Oxidation Annealing of SiO2/4H-SiC (0001) Interface Properties by AR-XPS Measurements", Materials Science Forum, Vols. 433-436, pp. 555-558, 2003

Online since:

September 2003

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$35.00

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