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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Study of the Wet Re-Oxidation Annealing of...

Study of the Wet Re-Oxidation Annealing of SiO₂/4H-SiC (0001) Interface Properties by AR-XPS Measurements

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

555-558

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.555

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Online since:

September 2003

Authors:

A. Ekoué, O. Renault, Thierry Billon, Lea Di Cioccio, Gérard Guillot

Keywords:

Angle-Resolved X-Ray Photoelectron Spectroscopy AR-XPS, Carbon-Related Defects, Effective Fixed Oxide Charges, Interface States (or Traps), Metal-Oxide-Semiconductor (MOS), Oxidation, Re-Oxidation Anneal, SiO₂/SiC, Si-O-C Species

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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Citation:

[1] S. Suzuki et al, Mat. Sci. For. Vols 353-356, 643-646 (2001).

[2] L. Lipkin et al, Mat. Res. Symp. Vol. 640 (2001).

[3] J. R. Williams et al, Mat. Res. Soc. Symp. Proc. Vol. 640 (2001).

[4] Y. Hijikata et al, Appl. Surf. Sci. 184, 161-166 (2001).

[5] C. Önneby, C. G. Pantano, J. Vac. Sci. Technol. A15 (3), (1997), 1597.

[6] S. T. Pantelides et al, Mat. Res. Soc. Symp. Proc. Vol. 640 (2001). Table 2. Atomic concentration of (Si-OC) species before and after wet reoxidation, measured at θ=25° and θ=75°.

0.

5.

[1] 0.

[1] 5.

[2] 0.

[2] 5.

[3] 0.

[3] 5.

[4] 0.

[4] 5.

[5] 0.

[5] 5.

[6] 0 + reoxidation wet oxidation + reoxidation wet oxidation wet oxidation wet oxidation Si II concentration (at. %) � � �� .

DOI: 10.2172/5391452