Reduction of Interface Trapped Density of SiO2/4H-SiC by Oxidation of Atomic Oxygen

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

563-566

DOI:

10.4028/www.scientific.net/MSF.433-436.563

Citation:

R. Kosugi et al., "Reduction of Interface Trapped Density of SiO2/4H-SiC by Oxidation of Atomic Oxygen", Materials Science Forum, Vols. 433-436, pp. 563-566, 2003

Online since:

September 2003

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$35.00

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