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Reduction of Interface Trapped Density of SiO2/4H-SiC by Oxidation of Atomic Oxygen
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Reduction of Interface Trapped Density of SiO2/4H-SiC by Oxidation of Atomic Oxygen

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

563-566

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.563

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Online since:

September 2003

Authors:

Ryouji Kosugi, Kenji Fukuda, Kazuo Arai

Keywords:

Atomic Oxygen, Interface Trapped Density, MOS, Oxidation, Ozone Molecules

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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