High Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(000-1) Face Using H2 Post-Oxidation Annealing

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

567-570

DOI:

10.4028/www.scientific.net/MSF.433-436.567

Citation:

K. Fukuda et al., "High Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(000-1) Face Using H2 Post-Oxidation Annealing", Materials Science Forum, Vols. 433-436, pp. 567-570, 2003

Online since:

September 2003

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$35.00

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