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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436High Inversion Channel Mobility of MOSFET...

High Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(000-1) Face Using H₂ Post-Oxidation Annealing

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

567-570

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.567

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Online since:

September 2003

Authors:

Kenji Fukuda, Junji Senzaki, Kazutoshi Kojima, Takaya Suzuki

Keywords:

Carbon Face, Channel Mobility, Hydrogen, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Post-Oxidation Annealing

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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