Structural Defects at SiO2/SiC Interfaces Detected by Positron Annihilation

Masaki Maekawa; Atsuo Kawasuso; Masahito Yoshikawa; Hisayoshi Itoh

doi:10.4028/www.scientific.net/MSF.433-436.559

Paper Titles

Positron Annihilation Studies of Defects at the SiO₂/SiC Interface
p.543

A Study of the Shallow Electron Traps at the 4H-SiC/SiO₂ Interface
p.547

Traps at the Interface of 3C-SiC/SiO₂-MOS-Structures
p.551

Study of the Wet Re-Oxidation Annealing of SiO₂/4H-SiC (0001) Interface Properties by AR-XPS Measurements
p.555

Structural Defects at SiO₂/SiC Interfaces Detected by Positron Annihilation
p.559

Reduction of Interface Trapped Density of SiO₂/4H-SiC by Oxidation of Atomic Oxygen
p.563

High Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(000-1) Face Using H₂ Post-Oxidation Annealing
p.567

Cubic SiC Surface Structure Studied by X-Ray Diffraction
p.571

Adsorption of Toluene on Si(100) from First Principles
p.575

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Structural Defects at SiO₂/SiC Interfaces Detected by Positron Annihilation

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Materials Science Forum (Volumes 433-436)

Pages:

559-562

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.559

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Online since:

September 2003

Authors:

Masaki Maekawa, Atsuo Kawasuso, Masahito Yoshikawa, Hisayoshi Itoh

Keywords:

Doppler-Shift, MOS Structure, Open-Volume Defect, Positron Beam, SiO₂/SiC Interface

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References

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