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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Positron Annihilation Studies of Defects at the...

Positron Annihilation Studies of Defects at the SiO₂/SiC Interface

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

543-546

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.543

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Online since:

September 2003

Authors:

James Dekker, Kimmo Saarinen, H.Ö. Ólafsson, E.Ö. Sveinbjörnsson

Keywords:

Interface, Open Volume Defect, Positron Annihilation, Silicon Dioxide

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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