Positron Annihilation Studies of Defects at the SiO2/SiC Interface

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

543-546

Citation:

J. Dekker et al., "Positron Annihilation Studies of Defects at the SiO2/SiC Interface", Materials Science Forum, Vols. 433-436, pp. 543-546, 2003

Online since:

September 2003

Export:

Price:

$38.00

[1] L.A. Lipkin, and J. W. Palmour, IEEE Trans. Electr. Dev., Vol. 46 (1999), p.525 and references therein.

[2] M. Di Ventra and S. T. Pantelides, Phys. Rev. Lett., Vol. 83, (1999), p.1624.

[3] H. Kauppinen, C. Corbel, J. Nissilä, K. Saarinen, P. Hautojärvi, Phys Rev. B, Vol. 57 (1998), p.12911.

[4] M. Clement, J. M. M. de Nijs, P. Balk, H. Schut, A. van Veen, J. Appl. Phys., Vol. 81 (1997), p. (1943).

[5] H. Kauppinen, C. Corbel, L. Liszkay, T. Laine, J. Oila, K. Saarinen, P. Hautojärvi, M. F. Barthe, G. Blondiaux, J. Phys. Condens. Matter, Vol. 9 (1997), p.10595.

DOI: https://doi.org/10.1088/0953-8984/9/48/005