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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436A Cause for SiC/SiO2 Interface States: the Site...

A Cause for SiC/SiO₂ Interface States: the Site Selection of Oxygen in SiC

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Silicon Carbide and Related Materials - 2002

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Materials Science Forum (Volumes 433-436)

Pages:

535-538

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.535

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Online since:

September 2003

Authors:

Peter Deák, Adam Gali, Z. Hajnal, Thomas Frauenheim, Nguyen Tien Son, Erik Janzén, Wolfgang J. Choyke, P. Ordejón

Keywords:

Interface States (or Traps), SiO₂, Theory

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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