A Cause for SiC/SiO2 Interface States: the Site Selection of Oxygen in SiC

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

535-538

Citation:

P. Deák et al., "A Cause for SiC/SiO2 Interface States: the Site Selection of Oxygen in SiC", Materials Science Forum, Vols. 433-436, pp. 535-538, 2003

Online since:

September 2003

Export:

Price:

$38.00

[1] N. S. Saks, S. S. Mani, and A. K. Agarwal, Appl. Phys. Lett. 76 (2000), p.2250.

[2] V. V. Afanas'ev, M. Bassler, G. Pensl, and M. Schulz, Phys. Stat. Sol (a) 162 (1997), p.321.

[3] A. Gali, D. Heringer, P. Deák, Z. Hajnal, Th. Frauenheim, W. J. Choyke, Mater Sci. Forum 353- 356 (2001).

DOI: https://doi.org/10.4028/www.scientific.net/msf.353-356.463

[4] J. A. Cooper Jr., Phys. Stat. Sol (a) 162 (1997), p.315.

[5] G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, M. D. Ventra, S. T. Pantelides, L. C. Feldman, and R. A. Weller, Appl. Phys. Lett. 76 (2000), p.1713.

[6] G. G. Jernigan, R. E. Stahlbush, and N. S. Saks, Appl. Phys. Lett. 77 (2000), p.1437.

[7] E. Artacho, D. Sánchez-Portal, P. Ordejón, A. García, and J. M. Soler, Phys. Stat. Sol. (b) 215 (1999), p.809.

[8] Ch. Köhler, Z. Hajnal, P. Deák, Th. Frauenheim and S. Suhai, Phys. Rev. B 64 (2001), p.085333/1.

[9] J. Dekker, K. Saarinen, H. Ö. Ólafsson, and E. Ö. Sveinbjörnsson, this volume.

Fetching data from Crossref.
This may take some time to load.