A Cause for SiC/SiO2 Interface States: the Site Selection of Oxygen in SiC

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

535-538

DOI:

10.4028/www.scientific.net/MSF.433-436.535

Citation:

P. Deák et al., "A Cause for SiC/SiO2 Interface States: the Site Selection of Oxygen in SiC", Materials Science Forum, Vols. 433-436, pp. 535-538, 2003

Online since:

September 2003

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$35.00

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