Photoluminescence and Thermally Stimulated Luminescence in Semi-Insulating SiC

Yu.M. Suleimanov; S. Lulu; I. Tarasov; Sergei S. Ostapenko; V.D. Heydemann; Matthew D. Roth; Olof Kordina; Mike F. MacMillan; Stephen E. Saddow

doi:10.4028/www.scientific.net/MSF.433-436.59

Paper Titles

Sublimation-Grown Semi-Insulating SiC for High Frequency Devices
p.39

Defects in Semi-Insulating SiC Substrates
p.45

Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth
p.51

PVT Growth of p-Type and Semi-Insulating 2-Inch 6H-SiC Crystals
p.55

Photoluminescence and Thermally Stimulated Luminescence in Semi-Insulating SiC
p.59

Growth of Phosphorus-Doped 6H-SiC Single Crystals by the Modified Lely Method
p.63

Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature Gradient
p.67

Uniformization of Radial Temperature Gradient in Sublimation Growth of SiC
p.71

Effect of Ambient on 4H-SiC Bulk Crystals Grown by Sublimation
p.75

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Photoluminescence and Thermally Stimulated Luminescence in Semi-Insulating SiC

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Silicon Carbide and Related Materials - 2002

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Materials Science Forum (Volumes 433-436)

Pages:

59-62

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.59

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Online since:

September 2003

Authors:

Yu.M. Suleimanov, S. Lulu, I. Tarasov, Sergei S. Ostapenko, V.D. Heydemann, Matthew D. Roth, Olof Kordina, Mike F. MacMillan, Stephen E. Saddow

Keywords:

Luminescence, Semi-Insulating SiC, Vanadium

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