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Paper Titles
HTCVD Grown Semi-Insulating SiC Substrates
p.33
Sublimation-Grown Semi-Insulating SiC for High Frequency Devices
p.39
Defects in Semi-Insulating SiC Substrates
p.45
Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth
p.51
PVT Growth of p-Type and Semi-Insulating 2-Inch 6H-SiC Crystals
p.55
Photoluminescence and Thermally Stimulated Luminescence in Semi-Insulating SiC
p.59
Growth of Phosphorus-Doped 6H-SiC Single Crystals by the Modified Lely Method
p.63
Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature Gradient
p.67
Uniformization of Radial Temperature Gradient in Sublimation Growth of SiC
p.71

PVT Growth of p-Type and Semi-Insulating 2-Inch 6H-SiC Crystals

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

55-58

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.55

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Online since:

September 2003

Authors:

Michael Rasp, Thomas L. Straubinger, Erwin Schmitt, Matthias Bickermann, Horst Sadowski, Sergey A. Reshanov

Keywords:

6H-SiC, Aluminum (Al), Bulk Growth, Doping, p-Type SiC, PVT Growth, Resistivity, Semi-insulating (SI), Vanadium

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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