Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

51-54

DOI:

10.4028/www.scientific.net/MSF.433-436.51

Citation:

M. Bickermann et al., "Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth", Materials Science Forum, Vols. 433-436, pp. 51-54, 2003

Online since:

September 2003

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$35.00

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