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Paper Titles
Growth of Faceted Free-Spreading SiC Bulk Crystals by Sublimation
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HTCVD Grown Semi-Insulating SiC Substrates
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Sublimation-Grown Semi-Insulating SiC for High Frequency Devices
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Defects in Semi-Insulating SiC Substrates
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Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth
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PVT Growth of p-Type and Semi-Insulating 2-Inch 6H-SiC Crystals
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Photoluminescence and Thermally Stimulated Luminescence in Semi-Insulating SiC
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Growth of Phosphorus-Doped 6H-SiC Single Crystals by the Modified Lely Method
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Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature Gradient
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Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

51-54

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.51

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Online since:

September 2003

Authors:

Matthias Bickermann, Dieter Hofmann, Thomas L. Straubinger, Roland Weingärtner, Albrecht Winnacker

Keywords:

Bulk Growth, Compensation Mechanism, Homogeneous Incorporation, Semi-insulating (SI), Vanadium Doping

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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