Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature Gradient

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

67-70

DOI:

10.4028/www.scientific.net/MSF.433-436.67

Citation:

Z.G. Herro et al., "Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature Gradient", Materials Science Forum, Vols. 433-436, pp. 67-70, 2003

Online since:

September 2003

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$35.00

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