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Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth
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PVT Growth of p-Type and Semi-Insulating 2-Inch 6H-SiC Crystals
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Photoluminescence and Thermally Stimulated Luminescence in Semi-Insulating SiC
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Growth of Phosphorus-Doped 6H-SiC Single Crystals by the Modified Lely Method
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Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature Gradient
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Uniformization of Radial Temperature Gradient in Sublimation Growth of SiC
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Effect of Ambient on 4H-SiC Bulk Crystals Grown by Sublimation
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Continuous Growth of SiC Single Crystal from Ultrafine Particle Precursor
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Defect Reduction in SiC Crystals Grown by the Modified Lely Method
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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Effective Increase of Single-Crystalline Yield...

Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature Gradient

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

67-70

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.67

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Online since:

September 2003

Authors:

Z.G. Herro, Matthias Bickermann, Boris M. Epelbaum, Pierre M. Masri, Albrecht Winnacker

Keywords:

Crystal Interface, Diameter Increase, Physical Vapor Transport, SiC Bulk Growth, Temperature Gradient

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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