Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature Gradient

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Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

67-70

Citation:

Z.G. Herro et al., "Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature Gradient", Materials Science Forum, Vols. 433-436, pp. 67-70, 2003

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September 2003

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[1] W.C. Dash, J. Appl. Phys. 30 (1959), p.459.

[2] J.A. Lely, Ber. Dt. Keram. Ges. 8 (1955), p.229.

[3] Y.M. Tairov and V.F. Tsvetkov, J. Crystal Growth 43 (1978), p.209.

[4] G. Ziegler, P. Lanig, D. Theis and C. Weyerich, IEEE Trans. Electron. Devices 30 (1983), p.277.

[5] D. Hofmann, R. Eckstein, M. Kölbl, Y. Makarov, St.G. Müller, E. Schmitt, A. Winnacker, R. Rupp, R. Stein, J. Völkl, J. Crystal Growth 174 (1997), p.669.

DOI: https://doi.org/10.1016/s0022-0248(97)00037-7

[6] M.V. Bogdanov, A.O. Galyukov, S. Yu. Karpov, A.V. Kulik, S. K Kochuguev, D. Kh. Ofengeim, A.V. Tsiryulnikov, M.S. Ramm, A.I. Zhmakin, Yu.N. Makarov, J. Crystal Growth 225 (2001), p.307.

DOI: https://doi.org/10.1016/s0022-0248(01)00879-x

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