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Uniformization of Radial Temperature Gradient in Sublimation Growth of SiC
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Effect of Ambient on 4H-SiC Bulk Crystals Grown by Sublimation
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Continuous Growth of SiC Single Crystal from Ultrafine Particle Precursor
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Defect Reduction in SiC Crystals Grown by the Modified Lely Method
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A Study of HTCVD Renewing of the SiC Polycrystalline Source during the PVT Process
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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Continuous Growth of SiC Single Crystal from...

Continuous Growth of SiC Single Crystal from Ultrafine Particle Precursor

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

79-82

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.79

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Online since:

September 2003

Authors:

Yoshimitsu Yamada, Kazukiyo Sagawa, Shinichi Nakashima

Keywords:

Carbothermal Reduction, Continuous Growth, Silicon Carbide (SiC), Single Crystal, Ultra-Fine Particles

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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