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Graphitization of the Seeding Surface during the Heating Stage of SiC PVT Bulk Growth
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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Morphological Features of Sublimation-Grown 4H-SiC...

Morphological Features of Sublimation-Grown 4H-SiC Layers

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

95-98

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.95

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Online since:

September 2003

Authors:

D. Schulz, J. Doerschel

Keywords:

4H-SiC, Physical Vapor Transport, Single Crystal Growth, Surface Morphology

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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