Optimization of Chamber Design and Rapid Thermal Processing Regimes for SiC Substrates by Temperature and Thermal Stress Distribution

Oleg A. Agueev; Alexander M. Svetlichnyi; A.G. Klovo; A.N. Kocherov; D.A. Izotovs

doi:10.4028/www.scientific.net/MSF.433-436.107

Paper Titles

Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport
p.91

Morphological Features of Sublimation-Grown 4H-SiC Layers
p.95

Graphitization of the Seeding Surface during the Heating Stage of SiC PVT Bulk Growth
p.99

Heat Transfer Modeling of a New Crystal Growth Process
p.103

Optimization of Chamber Design and Rapid Thermal Processing Regimes for SiC Substrates by Temperature and Thermal Stress Distribution
p.107

Crystal Interface Shape Simulation during SiC Sublimation Growth
p.111

Growth at High Rates and Characterization of Bulk 3C-SiC Material
p.115

Comparison between Ar and N₂ for High-Temperature Treatment of 4H-SiC Substrates
p.119

SiC Epitaxy on Non-Standard Surfaces
p.125

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Optimization of Chamber Design and Rapid Thermal Processing Regimes for SiC Substrates by Temperature and Thermal Stress Distribution

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Materials Science Forum (Volumes 433-436)

Pages:

107-110

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.107

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Online since:

September 2003

Authors:

Oleg A. Agueev, Alexander M. Svetlichnyi, A.G. Klovo, A.N. Kocherov, D.A. Izotovs

Keywords:

Modeling, Rapid Thermal Processing, SiC Substrates, Temperature Field, Thermal Stress

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