Paper Titles

A Study of HTCVD Renewing of the SiC Polycrystalline Source during the PVT Process
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Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport
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Morphological Features of Sublimation-Grown 4H-SiC Layers
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Graphitization of the Seeding Surface during the Heating Stage of SiC PVT Bulk Growth
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Heat Transfer Modeling of a New Crystal Growth Process
p.103

Optimization of Chamber Design and Rapid Thermal Processing Regimes for SiC Substrates by Temperature and Thermal Stress Distribution
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Crystal Interface Shape Simulation during SiC Sublimation Growth
p.111

Growth at High Rates and Characterization of Bulk 3C-SiC Material
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Comparison between Ar and N₂ for High-Temperature Treatment of 4H-SiC Substrates
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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Heat Transfer Modeling of a New Crystal Growth...

Heat Transfer Modeling of a New Crystal Growth Process

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

103-106

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.103

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Online since:

September 2003

Authors:

Francis Baillet, Didier Chaussende, Ludovic Charpentier, Etienne Pernot, Michel Pons, Roland Madar

Keywords:

Bulk Growth, Heat Transfer, Modeling, Silicon Carbide (SiC)

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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[1] D. Hobgood, M. Brady, W. Brixius, G. Fechko, R. Glass, D. Henshall, J. Jenny, R. Leonard, D. Malta, St.G. Muller, V. Tsvetkov, C.H. Carter Jr., Mater. Sci. Forum 338-342, 3 (2000).

DOI: 10.4028/www.scientific.net/msf.338-342.3

[2] D. Epelbaum, D. Hofmann, M. Muller, A. Winnacker, Mater. Sci. Forum 338-342, (2000).

[3] A. Ellison, J. Zhang, W. Magnusson, A. Henry, Q. Wahab, J.P. Bergman, C. Hemmingson, N.T. Son, E. Janzen, Mat. Sci. Forum: Vol. 338-342, 1312 (2000).

[4] L. Charpentier D. Chaussende, F. Baillet et al., this conference.

[5] D. Chaussende L. Charpentier, F. Baillet et al., this conference.