Effect of Ambient on 4H-SiC Bulk Crystals Grown by Sublimation
p.75
p.75
Continuous Growth of SiC Single Crystal from Ultrafine Particle Precursor
p.79
p.79
Defect Reduction in SiC Crystals Grown by the Modified Lely Method
p.83
p.83
A Study of HTCVD Renewing of the SiC Polycrystalline Source during the PVT Process
p.87
p.87
Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport
p.91
p.91
Morphological Features of Sublimation-Grown 4H-SiC Layers
p.95
p.95
Graphitization of the Seeding Surface during the Heating Stage of SiC PVT Bulk Growth
p.99
p.99
Heat Transfer Modeling of a New Crystal Growth Process
p.103
p.103
Optimization of Chamber Design and Rapid Thermal Processing Regimes for SiC Substrates by Temperature and Thermal Stress Distribution
p.107
p.107
Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport
Abstract:
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volumes 433-436)
Pages:
91-94
Citation:
Online since:
September 2003
Authors:
Price:
Сopyright:
© 2003 Trans Tech Publications Ltd. All Rights Reserved
Share:
Citation: