Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

91-94

Citation:

H. J. Rost et al., "Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport", Materials Science Forum, Vols. 433-436, pp. 91-94, 2003

Online since:

September 2003

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$38.00

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