Defect Reduction in SiC Crystals Grown by the Modified Lely Method

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

83-86

Citation:

M. Anikin et al., "Defect Reduction in SiC Crystals Grown by the Modified Lely Method", Materials Science Forum, Vols. 433-436, pp. 83-86, 2003

Online since:

September 2003

Export:

Price:

$38.00

[1] M. Anikin, E. Pernot, M. Pons , R. Madar et al., Mat. Sci. Forum, Vols. 353-356 (2001) 21, Trans Tech Publication, Switzerland.

[2] E. Pernot, P. Pernot-Rejmánková, M. Anikin, B. Pelissier, C. Moulin,R. Madar; J. Phys. D: Applied Physics MAY 21 2001; 34 (10A): A136-A139.

DOI: https://doi.org/10.1088/0022-3727/34/10a/328

[3] C. Moulin, M. Pons, M. Anikin, E. Pernot, R. Madar et al., Mat. Sci. Forum, Vols. 353-356, (2001) 7, Trans Tech Publication, Switzerland.