Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature Gradient
p.67
p.67
Uniformization of Radial Temperature Gradient in Sublimation Growth of SiC
p.71
p.71
Effect of Ambient on 4H-SiC Bulk Crystals Grown by Sublimation
p.75
p.75
Continuous Growth of SiC Single Crystal from Ultrafine Particle Precursor
p.79
p.79
Defect Reduction in SiC Crystals Grown by the Modified Lely Method
p.83
p.83
A Study of HTCVD Renewing of the SiC Polycrystalline Source during the PVT Process
p.87
p.87
Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport
p.91
p.91
Morphological Features of Sublimation-Grown 4H-SiC Layers
p.95
p.95
Graphitization of the Seeding Surface during the Heating Stage of SiC PVT Bulk Growth
p.99
p.99
Defect Reduction in SiC Crystals Grown by the Modified Lely Method
Abstract:
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Periodical:
Materials Science Forum (Volumes 433-436)
Pages:
83-86
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Online since:
September 2003
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© 2003 Trans Tech Publications Ltd. All Rights Reserved
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