Paper Titles

Uniformization of Radial Temperature Gradient in Sublimation Growth of SiC
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Effect of Ambient on 4H-SiC Bulk Crystals Grown by Sublimation
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Continuous Growth of SiC Single Crystal from Ultrafine Particle Precursor
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Defect Reduction in SiC Crystals Grown by the Modified Lely Method
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A Study of HTCVD Renewing of the SiC Polycrystalline Source during the PVT Process
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Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport
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Morphological Features of Sublimation-Grown 4H-SiC Layers
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Graphitization of the Seeding Surface during the Heating Stage of SiC PVT Bulk Growth
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Heat Transfer Modeling of a New Crystal Growth Process
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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436A Study of HTCVD Renewing of the SiC...

A Study of HTCVD Renewing of the SiC Polycrystalline Source during the PVT Process

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

87-90

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.87

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Online since:

September 2003

Authors:

Ludovic Charpentier, Francis Baillet, Didier Chaussende, Etienne Pernot, Michel Pons, Roland Madar

Keywords:

Bulk, Chemical Vapor Deposition (CVD), Physical Vapor Transport, Silicon Carbide (SiC), Sublimation

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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Citation:

[1] A. Ellison, J. Zhang, W. Magnusson, A. Henry, Q. Wahab, J.P. Bergman, C. Hemmingson, N.T. Son, E. Janzen, Mat. Sci. Forum: Vol. 338-342, (2000) p.1312.

[2] A. Pisch, A.M. Feraria, C. Chatillon, E. Blanquet, M. Pons, C. Bernard, M. Anikin, R. Madar, Mat. Sci. Forum, Vol 338-342, (2000) pp.91-94.

DOI: 10.4028/www.scientific.net/msf.338-342.91

[3] D. Chaussende, F. Baillet et al., this conference.

[4] F. Baillet, D. Chaussende et al., this conference.