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Graphitization of the Seeding Surface during the Heating Stage of SiC PVT Bulk Growth
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Heat Transfer Modeling of a New Crystal Growth Process
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Optimization of Chamber Design and Rapid Thermal Processing Regimes for SiC Substrates by Temperature and Thermal Stress Distribution
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Crystal Interface Shape Simulation during SiC Sublimation Growth
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Growth at High Rates and Characterization of Bulk 3C-SiC Material
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Comparison between Ar and N₂ for High-Temperature Treatment of 4H-SiC Substrates
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SiC Epitaxy on Non-Standard Surfaces
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4H-SiC Epitaxial Growth for High-Power Devices
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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Crystal Interface Shape Simulation during SiC...

Crystal Interface Shape Simulation during SiC Sublimation Growth

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

111-114

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.111

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Online since:

September 2003

Authors:

K. Böttcher, D. Schulz

Keywords:

Crystal-Vapor Interface, Global Heat , Mass Transfer, Numerical Modeling, Silicon Carbide (SiC), Sublimation Growth

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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