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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Growth of Phosphorus-Doped 6H-SiC Single Crystals...

Growth of Phosphorus-Doped 6H-SiC Single Crystals by the Modified Lely Method

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

63-66

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.63

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Online since:

September 2003

Authors:

Kurt Semmelroth, Frank Schmid, D. Karg, Gerhard Pensl, Manfred Maier, Siegmund Greulich-Weber, Johann Martin Spaeth

Keywords:

High N-Type Conductivity, Low Bulk Resistance, Modified Lely Method, Phosphorus Donors, Physical Vapor Transport

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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