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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Sublimation-Grown Semi-Insulating SiC for High...

Sublimation-Grown Semi-Insulating SiC for High Frequency Devices

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

39-44

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.39

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Online since:

September 2003

Authors:

Stephan G. Müller, M.F. Brady, W.H. Brixius, R.C. Glass, H. McD. Hobgood, Jason R. Jenny, R.T. Leonard, D.P. Malta, Adrian R. Powell, Valeri F. Tsvetkov, S.T. Allen, John W. Palmour, Calvin H. Carter Jr.

Keywords:

Carbon Vacancy, DLTS, EPR, Micropipe, Resistivity, Semi-insulating (SI), Sublimation Growth, Thermal Conductivity (TC)

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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[12] 14 16 18 20 22.

[24] [26] [28] [30] [32] [34] 0. 25-mm SiC MESFET Freq. = 3. 5 GHz VDS = 50 V, VGS = -8 V P2dB = 5. 2 W/mm GAssoc = 11. 1 dB PAE = 63% Input Power (dBm) Output Power (dBm).

[10] [20] [30] [40] [50] [60] [70] Gain POUT PAE PAE (%) or Gain (dB) Figure 10. A 3. 5 GHz CW power sweep of a 0. 25- mm SiC MESFET on a HPSI 4H-SiC substrate tuned in class A operation. VDS = 50 V. Figure 11. Balanced amplifier with Cree's 10 Watt commercial MESFETs (arrowed), that provides 22 Watt at P1dB across 2. 0-2. 4 GHz.

DOI: 10.1109/eumic.2016.7777541