Sublimation-Grown Semi-Insulating SiC for High Frequency Devices

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Materials Science Forum (Volumes 433-436)

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Peder Bergman and Erik Janzén

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39-44

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S. G. Müller et al., "Sublimation-Grown Semi-Insulating SiC for High Frequency Devices", Materials Science Forum, Vols. 433-436, pp. 39-44, 2003

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September 2003

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[24] [26] [28] [30] [32] [34] 0. 25-mm SiC MESFET Freq. = 3. 5 GHz VDS = 50 V, VGS = -8 V P2dB = 5. 2 W/mm GAssoc = 11. 1 dB PAE = 63% Input Power (dBm) Output Power (dBm).

[10] [20] [30] [40] [50] [60] [70] Gain POUT PAE PAE (%) or Gain (dB) Figure 10. A 3. 5 GHz CW power sweep of a 0. 25- mm SiC MESFET on a HPSI 4H-SiC substrate tuned in class A operation. VDS = 50 V. Figure 11. Balanced amplifier with Cree's 10 Watt commercial MESFETs (arrowed), that provides 22 Watt at P1dB across 2. 0-2. 4 GHz.