Vacancy Studies in Silicon-Rich Intermetallic Compounds: MoSi2

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Materials Science Forum (Volumes 445-446)

Edited by:

Toshio Hyodo, Yoshinori Kobayashi, Yasuyuki Nagashima, Haruo Saito

Pages:

186-188

Citation:

W. Sprengel et al., "Vacancy Studies in Silicon-Rich Intermetallic Compounds: MoSi2", Materials Science Forum, Vols. 445-446, pp. 186-188, 2004

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January 2004

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[1] K. Ito et al.: Progr. Mater. Sci. Vol. 42 (1997), p.193.

[2] C.L. Fu et al.: Phys. Rev. B Vol. 48 (1993), p.6712.

[3] M. Fähnle et al.: Intermetallics Vol. 7 (1999), p.315.

[4] H. -E. Schaefer: Phys. Stat. Sol. A Vol. 102 (1987), p.47.

[5] R. Würschum et al.: Phys. Rev. Lett. Vol. 75 (1995), p.97.

[6] R. Würschum et al.: Phys. Rev. Lett. Vol. 79 (1997), p.4918.

[7] H. -E. Schaefer et al.: Phys. Rev. Lett. Vol. 82 (1999), p.948.

[8] W. Sprengel, M. A. Müller and H. -E. Schaefer, in Intermetallic Compounds-Principles and Practice, ed. by J. H. Westbrook and R. L. Fleischer, Vol. 3, (John Wiley & Sons, Chichester, 2002), p.275.

[9] A. A. Rempel et al: Phys. Rev. Lett. Vol. 89 (2002), p.185501.

[10] X.Y. Zhang et al.: Phys. Rev. B Vol. 66 (2002), p.144105.

[11] P.A. Kumar et al.: Phys. Rev. Lett. Vol. 77 (1996), p. (2097).

[12] R. Würschum et al.: Phys. Rev. B Vol. 54 (1996), p.849.

[13] X.Y. Zhang et al.: to be published.

[14] M. Salamon and H. Mehrer: Def. Diff. Forum Vol. 216-217 (2003), p.161.

[15] A. Gude and H. Mehrer: Phil Mag A. Vol 76 (1997), p.1.

[16] E. Kümmerle et al.: Phys. Rev. B Vol. 52 (1995), p. R6947.