Preparation and Characterization of IZO Transparent Conducting Films by the Sol-Gel Method

Chang Hyun Kim; Jin Hong Lee; Byung Ok Park

doi:10.4028/www.scientific.net/MSF.449-452.469

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HomeMaterials Science ForumMaterials Science Forum Vols. 449-452Preparation and Characterization of IZO...

Preparation and Characterization of IZO Transparent Conducting Films by the Sol-Gel Method

Abstract:

Indium-zinc oxide (IZO), with Zn/(Zn+In)=0.33 - 0.78, films were deposited by the sol-gel method. Effects of Zn/(Zn+In) atomic ratio and annealing temperature on the structural, electrical and optical properties of IZO thin film were investigated. Films of Zn/(Zn+In)=0.33 prepared at 600°C had the lowest resistivity value, 4.48X10^-2 Ω cm (carrier concentration=3.83X 10¹⁸ cm^-3 and mobility=25.54 cm2/Vs), and the structure of these films matched that of Zn₂In₂O₅ film. Average optical transmittances of all films were above 80% in the visible range. The highest average transmittance was observed at Zn/(Zn+In)=0.5, with 86.8% in the visible range.

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Materials Science Forum (Volumes 449-452)

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469-472

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.449-452.469

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Online since:

March 2004

Authors:

Chang Hyun Kim, Jin Hong Lee, Byung Ok Park

Keywords:

Electrical Properties, Indium Zinc Oxide, Optical Property, Sol-Gel Method, Thin Film, Transparent Conducting Oxide Films

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