Effect of UV Illumination on Deposition of Low-k Si-O-C(-H) Films by PECVD

Abstract:

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The characteristics of plasma are important for the deposition of SiOC(-H) low dielectric thin film. The effect of UV light illumination on the plasma parameter in the capacitive coupled plasma chemical vapor deposition (CCP-CVD) system is investigated. The electron density is almost not changed, but the electron temperature decreases by UV light illumination. The deposition rate increases and the dielectric constant of the film is lowered with UV light.

Info:

Periodical:

Materials Science Forum (Volumes 449-452)

Edited by:

S.-G. Kang and T. Kobayashi

Pages:

473-476

DOI:

10.4028/www.scientific.net/MSF.449-452.473

Citation:

H. J. Lee et al., "Effect of UV Illumination on Deposition of Low-k Si-O-C(-H) Films by PECVD", Materials Science Forum, Vols. 449-452, pp. 473-476, 2004

Online since:

March 2004

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$35.00

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