Ferroelectric Characteristics of SrxBi2.4Ta2O9 Thin Films and Electrical Properties of the Pt/SrxBi2.4Ta2O9/TiO2/Si Structure

Abstract:

Article Preview

Ferroelectric characteristics of the 400 nm-thick SrxBi2.4Ta2O9(0.7≤x≤1.3) thin films processed by metalorganic decomposition were investigated, and electrical properties of the Pt/Sr0.85Bi2.4Ta2O9/TiO2/Si structure prepared using TiO2 buffer layer were characterized. The Sr-deficient SrxBi2.4Ta2O9 films exhibited well-developed ferroelectric hysteresis curves compared to those of the Sr-excess films. The Sr0.85Bi2.4Ta2O9 film exhibited optimum ferroelectric properties, such as high remanent polarization and low leakage current density, among SrxBi2.4Ta2O9 films. A memory window of the Pt/SrxBi2.4Ta2O9/TiO2/Si structure was dependent upon the coercive field of the SrxBi2.4Ta2O9 film, and the Pt/SrxBi2.4Ta2O9/TiO2/Si exhibited a maximum memory window of 1.3 V at the sweeping voltage of ±5 V.

Info:

Periodical:

Materials Science Forum (Volumes 449-452)

Edited by:

S.-G. Kang and T. Kobayashi

Pages:

477-480

Citation:

J.H. Choi and T. S. Oh, "Ferroelectric Characteristics of SrxBi2.4Ta2O9 Thin Films and Electrical Properties of the Pt/SrxBi2.4Ta2O9/TiO2/Si Structure", Materials Science Forum, Vols. 449-452, pp. 477-480, 2004

Online since:

March 2004

Export:

Price:

$38.00

[1] J. F. Scott and C. A. Araujo: Science Vol. 246 (1990), p.1400.

[2] K. Watanabe, A. J. Hartman, R. N. Lamb, and J. F. Scott: J. Appl. Phys. Vol. 84 (1998), p.2170.

[3] Y. Shimakawa, Y. Kubo, N. Nakagawa, T. Kamitama, H. Asano, and F. Izumi: Appl. Phys. Lett. Vol. 74 (1999), p. (1904).

[4] E. Tokumitsu, K. Itani, B. Moon, and H. Ishiwara: Jpn. J. Appl. Phys. Vol. 34 (1995), p.5202.

[5] J. D. Park and T. S. Oh: J. Kor. Phys. Soc., Vol. 37 (2000), p.1072.

[6] P. Alexsandrov, J. Koprinarova, and D. Todorov: Vacuum Vol. 47 (1996), p.1333.

[7] K. Miura and M. Tanaka: Jpn. J. Appl. Phys. Vol. 37 (1998), p.2554.

[8] T. Chen, T. Li, X. Zhang, and S. B. Desu: J. Mater. Res. Vol. 12 (1997), p.1569.

[9] D. J. Yeon, J. D. Park, Y. W. Kwon, and T. S. Oh: J. Mater. Sci. Vol. 35 (2000), p.2405.

[10] T. Kanashima and M. Okuyama: Jpn. J. Appl. Phys Vol. 38 (1999).