Ferroelectric Characteristics of SrxBi2.4Ta2O9 Thin Films and Electrical Properties of the Pt/SrxBi2.4Ta2O9/TiO2/Si Structure

J.H. Choi; Tae Sung Oh

doi:10.4028/www.scientific.net/MSF.449-452.477

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HomeMaterials Science ForumMaterials Science Forum Vols. 449-452Ferroelectric Characteristics of SrxBi2.4Ta2O9...

Ferroelectric Characteristics of Sr_xBi_2.4Ta₂O₉ Thin Films and Electrical Properties of the Pt/Sr_xBi_2.4Ta₂O₉/TiO₂/Si Structure

Abstract:

Ferroelectric characteristics of the 400 nm-thick Sr_xBi_2.4Ta₂O₉(0.7≤x≤1.3) thin films processed by metalorganic decomposition were investigated, and electrical properties of the Pt/Sr_0.85Bi_2.4Ta₂O₉/TiO₂/Si structure prepared using TiO₂ buffer layer were characterized. The Sr-deficient Sr_xBi_2.4Ta₂O₉ films exhibited well-developed ferroelectric hysteresis curves compared to those of the Sr-excess films. The Sr0.85Bi2.4Ta2O9 film exhibited optimum ferroelectric properties, such as high remanent polarization and low leakage current density, among Sr_xBi_2.4Ta₂O₉ films. A memory window of the Pt/SrxBi2.4Ta2O9/TiO2/Si structure was dependent upon the coercive field of the Sr_xBi_2.4Ta₂O₉ film, and the Pt/Sr_xBi_2.4Ta₂O₉/TiO₂/Si exhibited a maximum memory window of 1.3 V at the sweeping voltage of ±5 V.