Comparison of Direct Numerical Procedure and Monte Carlo Technique to Determine the Charging Effects in Submicron Structures

Z.Lj. Petrović; S. Sakadžić; N. Spasojević; J. Matsui; T. Makabe

doi:10.4028/www.scientific.net/MSF.453-454.9

Paper Titles

Comparison of Direct Numerical Procedure and Monte Carlo Technique to Determine the Charging Effects in Submicron Structures
p.9

Data Bases for Modeling Plasma Devices for Processing of Integrated Circuits
p.15

Optimization of Intersubband Optical Nonlinearities in Continually Graded AlGaN Quantum Well Structures
p.21

Surface Density Analytical Model of Two-Dimensional Electron Gas in HEMT Structures
p.27

Thermodynamics of Mechanical Oscillations in Superlattices
p.33

Study of the Increased Temperature Influence on the Degradation of the Photodetectors through Ideality Factor
p.37

Metal-Induced Crystallization of Polycrystalline Silicon by In-Situ Excimer Laser Annealing During Low-Pressure CVD Growth
p.43

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Comparison of Direct Numerical Procedure and Monte Carlo Technique to Determine the Charging Effects in Submicron Structures

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Materials Science Forum (Volumes 453-454)

Pages:

9-14

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.453-454.9

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Online since:

May 2004

Authors:

Z.Lj. Petrović, S. Sakadžić, N. Spasojević, J. Matsui, T. Makabe

Keywords:

Boltzmann Equation, Charging, High Aspect Ratio, Monte-Carlo Simulation, Nanotechnology, Plasma Etching, Silicon Dioxide, ULSI

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