Thermophysical Properties of Aluminum Infiltrated Silicon Carbide for Electronic Packaging

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The effects of interfacial thickness and temperature on thermal conductivity and CTEs of Al/SiC packaging materials were investigated. The interfacial thermal conductivity and thickness have significant influence on the thermal conductivity of the Al/SiC packaging materials, while the SiC size has slight influence on that of the Al/SiC packaging materials. The experiment results of thermal conductivity are similar to Hassleman model and simulation results. Schapery model can be used to calculate the CTEs of composites when temperatures are lower(50~100°C) and Kerner model can be used when temperatures are higher(300~450°C). The CTEs of composites will increase more quickly than that by three models when temperatures are between 100°C and 300°C.

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Periodical:

Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

1755-1758

Citation:

J.F. Liang et al., "Thermophysical Properties of Aluminum Infiltrated Silicon Carbide for Electronic Packaging", Materials Science Forum, Vols. 475-479, pp. 1755-1758, 2005

Online since:

January 2005

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$38.00

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[2] 1µm 440nm 44nm CTE(10 -6 / K) Temperature(℃) 0 100 200 300 400 500.

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[11] 0 B C D E CTE( 10- 6/ ℃ ) Temperature( ℃ ) Fig. 4. The effect of SiO2 thickness on the CTE of the Al/SiC Fig. 5. Comparison of the measured CTEs with the theoretical predictions (SiO2 thickness: 44nm).

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