Study on Thermal Shock Resistance of Insulated Metal Substrate

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Abstract:

Anodizing technique was applied to prepare insulated metal substrates (IMS) for BGA packaging. “Ideal” IMS used anodic film of aluminum as the insulating layer instead of epoxy, which led to higher thermal conductivity. But the thermal shock resistance of IMS is poor because of the great difference of thermal expansion coefficient between aluminum and its anodic film. In this study, different anodizing processes of aluminum were analyzed. The parameters, which can affect the thermal shock resistance of IMS, especially the surface temperature of Al substrate, were studied. The anodic film obtained with the optimized parameters of anodizing process had excellent performance, such as the resistivity was over 1013Ω·cm, the breakdown voltage was higher than 600V, and the most important thing was that it could resist thermal shocks between room temperature and 300°C. Then BGA packaging was successfully performed based on this IMS.

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Materials Science Forum (Volumes 475-479)

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1737-1742

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January 2005

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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[1] Rao Tummala: the second International Symposium on Electronic Packaging Technology (Dec9-12, 1996, Shanghai, China).

Google Scholar

[2] Deepak Mahulikar, Anthony Pasqualoni: IEEE Transactions on Components, Hybrids, and Manufacturing Technology Vol. 16, No. 8 (1993).

Google Scholar

[3] Yonemura Naomi, Fukuda Makoto, Shigi Tadasuke: Proceedings of the IEEE/CPMT International Electronic Manufacturing Technology Symposium (Apr.16-18 1997), pp.303-307.

Google Scholar

[4] S. D. Pascoli, P. E. Bagnoli, C. Casarosa: Proceedings of the 1998 4th International Workshop on Thermal Investigations of ICs and Microstructures (Sep 27-29 1998), pp.47-50.

Google Scholar

[5] P. Hoffman, et al: Proceedings of the ITAP'95 (1995), pp.47-53.

Google Scholar

[6] J. Wilson, S. Moore, and E. Laine: Proceedings of the 45 th Electronic Components and Technology Conference (1995), pp.42-45.

Google Scholar

[7] S. Tostado, P. Hoffman: IEPS (1995), pp.559-564.

Google Scholar

[8] Y. Kurihara, T. Endoh: IEICE TRANSACTIONS ON ELECTRONICS 3 (1998), pp.439-446.

Google Scholar

[9] S. Tostado, J. Chow: IEEE (1998), pp.1265-1270.

Google Scholar

[10] K. Shimizu, K. Kobayashi, et al: Philosophical Magazine A. Vol.66, No.4 (1992), pp.643-652.

Google Scholar