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Paper Titles
Studies on the Heterostructure of Fe Film on Si Substrate
p.3753
The Influences of Depositing Angles on TbFe Film Magnetic and Magnetostrictive Characteristics
p.3757
Transport Properties in YBa2Cu4O8/La0.67Ca0.33MnO3 Multilayers
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Microstructural Evolution of MgB2 Layers Prepared by Post Annealing of Evaporated Boron and Co-Evaporated MgBx (x = 1.1~4.3) Films
p.3765
Synthesis of Surface Acoustic Wave Filter with Al/ZnO Thin Film Deposited on Silicon Wafer
p.3771
Microstructure and Electronic Properties of Al/Zr/LiNbO3 Multilayers
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Finite Element Analysis of Nano/Micro Pattern Fabrication by Nanoscratch Process
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The Growth of GaN Films on Si Substrates by HVPE
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Nano-Structures and Properties of Zinc Nitride Prepared by Nitridation Technique
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Synthesis of Surface Acoustic Wave Filter with Al/ZnO Thin Film Deposited on Silicon Wafer

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Abstract:

ZnO thin film, as a promising piezoelectric material, possesses unique electrical, acoustical, and optical properties. In this paper, Al/ZnO thin film was deposited on Si wafer by magnetron sputtering. Highly oriented, dense, and fine-grain polycrystalline ZnO films with excellent surface flatness and high resistivities have been obtained, when the sputtered gas pressure was 0.9 Pa, the temperature was 200 °C and the Ar-to-O2 ratio was 1:3. A 780MHz surface acoustic wave filter (SAWF) has been successfully fabricated using the Al/ZnO film on silicon wafer.

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Periodical:

Materials Science Forum (Volumes 475-479)

Pages:

3771-3774

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.475-479.3771

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Online since:

January 2005

Authors:

F. Pan, J.J. Chen, Fei Zeng, Y. Gao, D.M. Li

Keywords:

Aluminum (Al), Surface Acoustic Wave Filter, Thin Film, Zinc Oxide (ZnO)

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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