Synthesis of Surface Acoustic Wave Filter with Al/ZnO Thin Film Deposited on Silicon Wafer

Abstract:

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ZnO thin film, as a promising piezoelectric material, possesses unique electrical, acoustical, and optical properties. In this paper, Al/ZnO thin film was deposited on Si wafer by magnetron sputtering. Highly oriented, dense, and fine-grain polycrystalline ZnO films with excellent surface flatness and high resistivities have been obtained, when the sputtered gas pressure was 0.9 Pa, the temperature was 200 °C and the Ar-to-O2 ratio was 1:3. A 780MHz surface acoustic wave filter (SAWF) has been successfully fabricated using the Al/ZnO film on silicon wafer.

Info:

Periodical:

Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

3771-3774

DOI:

10.4028/www.scientific.net/MSF.475-479.3771

Citation:

F. Pan et al., "Synthesis of Surface Acoustic Wave Filter with Al/ZnO Thin Film Deposited on Silicon Wafer", Materials Science Forum, Vols. 475-479, pp. 3771-3774, 2005

Online since:

January 2005

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$35.00

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