The Growth of GaN Films on Si Substrates by HVPE
GaN films are grown on Si(111) with low-temperature GaN (LT-GaN) layers as buffer layers by hydride vapor phase epitaxy (HVPE). The LT-GaN layers are deposited at different temperatures ranging from 400 to 900 °C. The surface property, the structure and optical properties of the GaN films with different LT-GaN layers are studied. When deposition temperature of LT-GaN layer is 600 °C, the GaN film shows the best properties.
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
H. Yu et al., "The Growth of GaN Films on Si Substrates by HVPE", Materials Science Forum, Vols. 475-479, pp. 3783-3786, 2005