The Growth of GaN Films on Si Substrates by HVPE

Huiqiang Yu; Lin Chen; Rong Zhang; Xiang Qian Xiu; Zi Li Xie; Yu Da Ye; Shu Lin Gu; Bo Shen; Yi Shi; You Dou Zheng

doi:10.4028/www.scientific.net/MSF.475-479.3783

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Microstructure and Electronic Properties of Al/Zr/LiNbO₃ Multilayers
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Finite Element Analysis of Nano/Micro Pattern Fabrication by Nanoscratch Process
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The Growth of GaN Films on Si Substrates by HVPE
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Nano-Structures and Properties of Zinc Nitride Prepared by Nitridation Technique
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Laser Doping and Recrystallization for Amorphous Silicon Films by Plasma-Enhanced Chemical Vapor Deposition
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Effect of Pt Interlayer on Thermal Stability of NiSi Films
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Electric-Pulse-Induced Reversible Resistance Change Effect and Its Fatigue Behavior in Manganite Perovskite Films
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HomeMaterials Science ForumMaterials Science Forum Vols. 475-479The Growth of GaN Films on Si Substrates by HVPE

The Growth of GaN Films on Si Substrates by HVPE

Abstract:

GaN films are grown on Si(111) with low-temperature GaN (LT-GaN) layers as buffer layers by hydride vapor phase epitaxy (HVPE). The LT-GaN layers are deposited at different temperatures ranging from 400 to 900 °C. The surface property, the structure and optical properties of the GaN films with different LT-GaN layers are studied. When deposition temperature of LT-GaN layer is 600 °C, the GaN film shows the best properties.