The Growth of GaN Films on Si Substrates by HVPE

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GaN films are grown on Si(111) with low-temperature GaN (LT-GaN) layers as buffer layers by hydride vapor phase epitaxy (HVPE). The LT-GaN layers are deposited at different temperatures ranging from 400 to 900 °C. The surface property, the structure and optical properties of the GaN films with different LT-GaN layers are studied. When deposition temperature of LT-GaN layer is 600 °C, the GaN film shows the best properties.

Info:

Periodical:

Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

3783-3786

Citation:

H. Yu et al., "The Growth of GaN Films on Si Substrates by HVPE", Materials Science Forum, Vols. 475-479, pp. 3783-3786, 2005

Online since:

January 2005

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$38.00

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