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HomeMaterials Science ForumMaterials Science Forum Vols. 480-481Comparisons on Doping of Different Alkyl Compound...

Comparisons on Doping of Different Alkyl Compound on SiO₂ to Form a Low-k Dielectric Material

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Cross-Disciplinary Applied Research in Materials Science and Technology

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Periodical:

Materials Science Forum (Volumes 480-481)

Pages:

213-216

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.480-481.213

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Online since:

March 2005

Authors:

A.Y.K. Lim, Kamarulazizi Ibrahim

Keywords:

Alkyl Compound, Chemical Vapor Deposition (CVD), Low-k Interlayer Dielectric, SiO₂

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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