Modification of the Oxide/Semiconductor Interface by High Temperature NO Treatments: A Combined EPR, NRA and XPS Study on Oxidized Porous and Bulk n-Type 4H-SiC
The effect of thermal treatments in nitric oxide (NO) on the paramagnetic defects at the 4H-SiC/SiO2 interface are analyzed by EPR in oxidized porous samples. The results on ultrathin thermal oxides show that the NO treatment at 1000°C is insufficient for an efficient reduction of the two dominant paramagnetic interface defects: PbC centers and carbon clusters. From the NRA and XPS analysis of bulk samples treated under the same conditions we attribute the weak effect to the low nitrogen concentration of only 1% at the interface.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
H. J. von Bardeleben et al., "Modification of the Oxide/Semiconductor Interface by High Temperature NO Treatments: A Combined EPR, NRA and XPS Study on Oxidized Porous and Bulk n-Type 4H-SiC", Materials Science Forum, Vols. 483-485, pp. 277-280, 2005