Characterization of SiC Thin Film Obtained by Magnetron Reactive Sputtering: IBA, IR and Raman Studies

H. Colder; M. Morales; Richard Rizk; I. Vickridge

doi:10.4028/www.scientific.net/MSF.483-485.287

Paper Titles

On Current Limitations in Porous SiC Applications
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Interface Defects in n-Type 3C-SiC/SiO₂: An EPR Study of Oxidized Porous Silicon Carbide Single Crystals
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Modification of the Oxide/Semiconductor Interface by High Temperature NO Treatments: A Combined EPR, NRA and XPS Study on Oxidized Porous and Bulk n-Type 4H-SiC
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Development of a KOH Defect Etching Furnace with Absolute In-Situ Temperature Measurement Capability
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Characterization of SiC Thin Film Obtained by Magnetron Reactive Sputtering: IBA, IR and Raman Studies
p.287

RBS-Channeling and EPR Studies of Damage in 2 MeV Al²⁺-Implanted 6H-SiC Substrates
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Microstructural Characterization of 3C-SiC Thin Films Grown by Flash Lamp Induced Liquid Phase Epitaxy
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Dynamical Study of Dislocations and 4H → 3C Transformation Induced by Stress in (11-20) 4H-SiC
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Pressure Effect on the Elastic Properties of SiC Polytypes
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HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Characterization of SiC Thin Film Obtained by...

Characterization of SiC Thin Film Obtained by Magnetron Reactive Sputtering: IBA, IR and Raman Studies

Abstract:

Co-sputtering of silicon and carbon in a hydrogenated plasma (20%Ar-80%H2) at temperatures, Ts, varying from 200°C to 600°C has been used to grow SiC thin films. We report on the influence of Ts on the crystallization, the ratio Si/C and the hydrogen content of the grown films. Film composition is determined by ion beam analysis via Rutherford backscattering spectrometry, nuclear reaction analysis via the 12C(d,p0)13C nuclear reaction and elastic recoil detection analysi(ERDA) for hydrogen content. Infrared absorption (IR) has been used to determine the crystalline fraction of the films and the concentration of the hydrogen bonded to Si or to C. Complementary to IR, bonding configuration has been also characterized by Raman spectroscopy. As Ts is increased, the crystalline fraction increases and the hydrogen content decreases, as observed by both ERDA and IR. It also appears that some films contain a few Si excess, probably located at the nanograin boundaries.

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Silicon Carbide and Related Materials 2004

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Materials Science Forum (Volumes 483-485)

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287-290

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https://doi.org/10.4028/www.scientific.net/MSF.483-485.287

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Online since:

May 2005

Authors:

H. Colder, M. Morales, Richard Rizk, I. Vickridge

Keywords:

Ion Beam Analysis, IR-Spectroscopy, Raman Spectroscopy, Silicon Carbide (SiC), Sputtering

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References

[1] H. Sung, G. Erkens, J. Funken, A. Voss, O. Lemmer and E. Kreutz: Surf. Coat. Technol. Vol. A12 (1994), p.541.

Google Scholar

[2] B-T Lee, D-K. Kim C-K. Moon and J.K. Kim: J. Mat. Res. Vol. 14 (1999), p.24.

Google Scholar

[3] N.A.E. Forhan, M.C. A Fantini and I. Pereyra: J. Non-Crystl. Sol. Vol. 338 (2004), p.119.

Google Scholar

[4] R. Rizk: Recent Res. Devel. Physics Vol. 5 (2004), p.1.

Google Scholar

[5] R. Doolittle: Nucl. Instrum. Meth. Vol. B15 (1986), p.227.

Google Scholar

[6] E. Andrade, A. Mahmood, S. Muhl, E.P. Zavala, J.C. Pineda and L. Huerta: Surf. Coat. Techno. Vol. 153 (2002), p.119.

Google Scholar

[7] M. Mayer: Max Planck Institut fur Plasmaphysik, Garching, Germany.

Google Scholar

[8] G. Spitzer, D.A. Kleiman, and D. Wals: Phys. Rev. Vol. 113 (1959), p.127.

Google Scholar

[9] D.K. Bas, F.W. Smith: Thin Solid Films Vol. 192 (1990), p.121.

Google Scholar

[10] L. Calcagno, F. Giorgis, A. Makhtari, P. Musumeci, R. Reitano: Phil Mag. B Vol. 79 (1999), p.1685.

Google Scholar

[11] M. Lattemann, E. Nold, S. Ulrich, H. Leiste, H. Holleck: Surf. Coat. Techno. Vol. 174 (2003), p.365.

Google Scholar

[12] L. Calcagno, P. Musumeci, F. Roccaforte, C. Bongiorno and G. Foti: Thin Sol. Films Vol. 411 (2002), p.298.

DOI: 10.1016/s0040-6090(02)00332-2

Google Scholar

[13] S. Kerdiles, A. Berthelot, F. Gourbilleau and R. Rizk: Appl. Phys. Lett Vol. 76 (1996), p.2373.

Google Scholar

[14] R. Dutta, P.K. Banerjee and S.S. Mitra: Phys. Stat. Sol. Vol. 113 (1982), p.277.

Google Scholar

[15] T. Friessnegg, M. Boudreau, P. Masher, A. Knights, P.J. Simpson and W. Puff: J. Appl. Phys. Vol. 84 (1998), p.786.

Google Scholar