Interface Defects in n-Type 3C-SiC/SiO2: An EPR Study of Oxidized Porous Silicon Carbide Single Crystals

Abstract:

Article Preview

The defects at the 3C-SiC/SiO2 interface have been studied by X-band EPR spectroscopy in oxidized porous 3C-SiC. One interface defect is detected; its spin Hamiltonian parameters, spin S=1/2, C3V symmetry, g//=2.00238 and g⊥=2.00317, central hyperfine interaction (CHF) with one carbon atom and AB//[001]=48G and superhyperfine (SHF) interaction with three equivalent Si neighbour atoms and TB//[001]=12.4G, allow us to attribute the center to a sp3 coordinated carbon dangling bond center, PbC.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

273-276

DOI:

10.4028/www.scientific.net/MSF.483-485.273

Citation:

H. J. von Bardeleben et al., "Interface Defects in n-Type 3C-SiC/SiO2: An EPR Study of Oxidized Porous Silicon Carbide Single Crystals", Materials Science Forum, Vols. 483-485, pp. 273-276, 2005

Online since:

May 2005

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.