Interface Defects in n-Type 3C-SiC/SiO₂: An EPR Study of Oxidized Porous Silicon Carbide Single Crystals

Abstract:

The defects at the 3C-SiC/SiO2 interface have been studied by X-band EPR spectroscopy in oxidized porous 3C-SiC. One interface defect is detected; its spin Hamiltonian parameters, spin S=1/2, C3V symmetry, g//=2.00238 and g⊥=2.00317, central hyperfine interaction (CHF) with one carbon atom and AB//[001]=48G and superhyperfine (SHF) interaction with three equivalent Si neighbour atoms and TB//[001]=12.4G, allow us to attribute the center to a sp3 coordinated carbon dangling bond center, PbC.

• Periodical: Materials Science Forum (Volumes 483-485)
• Pages: 273-276
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.483-485.273
• Online since: May 2005
• Authors: Hans Jürgen von Bardeleben, J.L. Cantin, L. Ke, Y. Shishkin, Robert P. Devaty, Wolfgang J. Choyke
• Keywords: 3C-SiC, EPR, Interface Defects, P_b Centers

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