Dynamical Study of Dislocations and 4H → 3C Transformation Induced by Stress in (11-20) 4H-SiC

Abstract:

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4H-SiC samples were bent in compression mode at temperature ranging from 400°C to 700°C. The introduced-defects were identified by Weak Beam (WB) and High Resolution Transmission Electron Microscopy (HRTEM) techniques. They consist of double stacking faults bound by 30° Si(g) partial dislocations whose glide locally transforms the material in its cubic phase. The velocity of partial dislocations was measured after chemical etching of the sample surface. The formation and the expansion of the double stacking faults are discussed.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

299-302

DOI:

10.4028/www.scientific.net/MSF.483-485.299

Citation:

H. Idrissi et al., "Dynamical Study of Dislocations and 4H → 3C Transformation Induced by Stress in (11-20) 4H-SiC ", Materials Science Forum, Vols. 483-485, pp. 299-302, 2005

Online since:

May 2005

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Price:

$35.00

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