Dynamical Study of Dislocations and 4H → 3C Transformation Induced by Stress in (11-20) 4H-SiC

Hosni Idrissi; Maryse Lancin; Joel Douin; G. Regula; Bernard Pichaud

doi:10.4028/www.scientific.net/MSF.483-485.299

Paper Titles

Development of a KOH Defect Etching Furnace with Absolute In-Situ Temperature Measurement Capability
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Characterization of SiC Thin Film Obtained by Magnetron Reactive Sputtering: IBA, IR and Raman Studies
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RBS-Channeling and EPR Studies of Damage in 2 MeV Al²⁺-Implanted 6H-SiC Substrates
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Microstructural Characterization of 3C-SiC Thin Films Grown by Flash Lamp Induced Liquid Phase Epitaxy
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Dynamical Study of Dislocations and 4H → 3C Transformation Induced by Stress in (11-20) 4H-SiC
p.299

Pressure Effect on the Elastic Properties of SiC Polytypes
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[01-15] Grown 6H-SiC Bulk Crystals Investigated by High Energy Triple Axis X-Ray Diffraction
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XRDT Study of Structural Defects of 6H-SiC Crystals
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Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals
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HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Dynamical Study of Dislocations and 4H → 3C...

Dynamical Study of Dislocations and 4H → 3C Transformation Induced by Stress in (11-20) 4H-SiC

Abstract:

4H-SiC samples were bent in compression mode at temperature ranging from 400°C to 700°C. The introduced-defects were identified by Weak Beam (WB) and High Resolution Transmission Electron Microscopy (HRTEM) techniques. They consist of double stacking faults bound by 30° Si(g) partial dislocations whose glide locally transforms the material in its cubic phase. The velocity of partial dislocations was measured after chemical etching of the sample surface. The formation and the expansion of the double stacking faults are discussed.

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Materials Science Forum (Volumes 483-485)

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299-302

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.299

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Online since:

May 2005

Authors:

Hosni Idrissi, Maryse Lancin, Joel Douin, G. Regula, Bernard Pichaud

Keywords:

4H-SiC, Dislocation Velocity, Double Stacking Faults, Mechanical Stress, TEM

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