Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals
We report defects study in 4H-SiC bulk crystals grown by sublimation method on micropipe filled seed crystals oriented (0001) on-axis. The seed crystals of 1~3 inch in diameter were prepared from the large 4H-SiC bulk crystals. Before the sublimation growth, micropipes of the seed crystals were filled with epilayers grown by micropipe filling technique of CVD method. We confirmed about 95% of micropipes perfectly disappeared in the grown crystal. The mechanism of the micropipe extinction was also defined by defect analysis.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
T. Kato et al., "Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals", Materials Science Forum, Vols. 483-485, pp. 315-318, 2005