Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals

Tomohisa Kato; Kazutoshi Kojima; Shin Ichi Nishizawa; Kazuo Arai

doi:10.4028/www.scientific.net/MSF.483-485.315

Paper Titles

Dynamical Study of Dislocations and 4H → 3C Transformation Induced by Stress in (11-20) 4H-SiC
p.299

Pressure Effect on the Elastic Properties of SiC Polytypes
p.303

[01-15] Grown 6H-SiC Bulk Crystals Investigated by High Energy Triple Axis X-Ray Diffraction
p.307

XRDT Study of Structural Defects of 6H-SiC Crystals
p.311

Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals
p.315

PVT-Growth and Characterization of Single Crystalline 3C-SiC on a (0001) 6H-SiC Substrate
p.319

Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers
p.323

Investigation of Stacking Fault Formation in Hydrogen Bombarded 4H-SiC
p.327

Intensity Ratio of the Doublet Signature of Excitons Bound to 3C-SiC Stacking Faults in a 4H-SiC Matrix
p.331

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Defect Characterization of 4H-SiC Bulk Crystals...

Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals

Abstract:

We report defects study in 4H-SiC bulk crystals grown by sublimation method on micropipe filled seed crystals oriented (0001) on-axis. The seed crystals of 1~3 inch in diameter were prepared from the large 4H-SiC bulk crystals. Before the sublimation growth, micropipes of the seed crystals were filled with epilayers grown by micropipe filling technique of CVD method. We confirmed about 95% of micropipes perfectly disappeared in the grown crystal. The mechanism of the micropipe extinction was also defined by defect analysis.

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Materials Science Forum (Volumes 483-485)

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315-318

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https://doi.org/10.4028/www.scientific.net/MSF.483-485.315

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Online since:

May 2005

Authors:

Tomohisa Kato, Kazutoshi Kojima, Shin Ichi Nishizawa, Kazuo Arai

Keywords:

Defect, Dislocation, Silicon Carbide (SiC), Single Crystal, Sublimation Growth, X-Ray Topography

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