Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals

Abstract:

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We report defects study in 4H-SiC bulk crystals grown by sublimation method on micropipe filled seed crystals oriented (0001) on-axis. The seed crystals of 1~3 inch in diameter were prepared from the large 4H-SiC bulk crystals. Before the sublimation growth, micropipes of the seed crystals were filled with epilayers grown by micropipe filling technique of CVD method. We confirmed about 95% of micropipes perfectly disappeared in the grown crystal. The mechanism of the micropipe extinction was also defined by defect analysis.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

315-318

DOI:

10.4028/www.scientific.net/MSF.483-485.315

Citation:

T. Kato et al., "Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals", Materials Science Forum, Vols. 483-485, pp. 315-318, 2005

Online since:

May 2005

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Price:

$35.00

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