Intensity Ratio of the Doublet Signature of Excitons Bound to 3C-SiC Stacking Faults in a 4H-SiC Matrix

Jean Camassel; Sandrine Juillaguet

doi:10.4028/www.scientific.net/MSF.483-485.331

Paper Titles

Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals
p.315

PVT-Growth and Characterization of Single Crystalline 3C-SiC on a (0001) 6H-SiC Substrate
p.319

Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers
p.323

Investigation of Stacking Fault Formation in Hydrogen Bombarded 4H-SiC
p.327

Intensity Ratio of the Doublet Signature of Excitons Bound to 3C-SiC Stacking Faults in a 4H-SiC Matrix
p.331

Specific Aspects of Type II Heteropolytype Stacking Faults in SiC
p.335

Optical Characterization of Deep Level Defects in SiC
p.341

Optical Centres with Local Vibrational Modes Created by High Temperature Annealing of Electron Irradiated 4H and 6H Silicon Carbide
p.347

Hyperfine Interaction of Nitrogen Donor in 4H-SiC Studied by Pulsed-ENDOR
p.351

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Intensity Ratio of the Doublet Signature of...

Intensity Ratio of the Doublet Signature of Excitons Bound to 3C-SiC Stacking Faults in a 4H-SiC Matrix

Abstract:

In 4H-SiC, 3C stacking fault (SF) behaves like a finite thickness type II quantum well. As a consequence, it can bind two excitons per well. We show in this work that, as the SF thickness increases, the relative intensity of the two transitions changes. This comes from a change in the wave functions overlap between the electron trapped in the well and the holes trapped neighbouring parts of the 4H-SiC matrix.

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Silicon Carbide and Related Materials 2004

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Materials Science Forum (Volumes 483-485)

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331-334

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https://doi.org/10.4028/www.scientific.net/MSF.483-485.331

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May 2005

Authors:

Jean Camassel, Sandrine Juillaguet

Keywords:

3C Stacking Faults, 4H-SiC, Quantum Wells Thickness

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