Intensity Ratio of the Doublet Signature of Excitons Bound to 3C-SiC Stacking Faults in a 4H-SiC Matrix

Abstract:

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In 4H-SiC, 3C stacking fault (SF) behaves like a finite thickness type II quantum well. As a consequence, it can bind two excitons per well. We show in this work that, as the SF thickness increases, the relative intensity of the two transitions changes. This comes from a change in the wave functions overlap between the electron trapped in the well and the holes trapped neighbouring parts of the 4H-SiC matrix.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

331-334

DOI:

10.4028/www.scientific.net/MSF.483-485.331

Citation:

J. Camassel and S. Juillaguet, "Intensity Ratio of the Doublet Signature of Excitons Bound to 3C-SiC Stacking Faults in a 4H-SiC Matrix", Materials Science Forum, Vols. 483-485, pp. 331-334, 2005

Online since:

May 2005

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Price:

$35.00

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