Investigation of Stacking Fault Formation in Hydrogen Bombarded 4H-SiC

Augustinas Galeckas; H. K.-Nielsen; Jan Linnros; Anders Hallén; Bengt Gunnar Svensson; P. Pirouz

doi:10.4028/www.scientific.net/MSF.483-485.327

Paper Titles

XRDT Study of Structural Defects of 6H-SiC Crystals
p.311

Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals
p.315

PVT-Growth and Characterization of Single Crystalline 3C-SiC on a (0001) 6H-SiC Substrate
p.319

Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers
p.323

Investigation of Stacking Fault Formation in Hydrogen Bombarded 4H-SiC
p.327

Intensity Ratio of the Doublet Signature of Excitons Bound to 3C-SiC Stacking Faults in a 4H-SiC Matrix
p.331

Specific Aspects of Type II Heteropolytype Stacking Faults in SiC
p.335

Optical Characterization of Deep Level Defects in SiC
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Optical Centres with Local Vibrational Modes Created by High Temperature Annealing of Electron Irradiated 4H and 6H Silicon Carbide
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HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Investigation of Stacking Fault Formation in...

Investigation of Stacking Fault Formation in Hydrogen Bombarded 4H-SiC

Abstract:

The effects of hydrogen and proton irradiation on stacking fault formation in 4H-SiC are investigated by an optical pump-probe method of imaging spectroscopy. We report optically stimulated nucleation and expansion of stacking faults (SFs) in 0.6 keV 2H+ implanted n-/n+ and p+/n-/n+ structures. The activation enthalpy for recombination enhanced dislocation glide (REDG) in hydrogenated samples (~0.25 eV) is found to be similar to that in a virgin material. Our results indicate that SFs mainly nucleate at the internal n-/n+ interface, beyond reach of hydrogen, thus justifying minor SF passivation effect. No REDG could be initiated optically in 2.5 MeV proton irradiated samples due to radiation defects providing alternative recombination channels to bypass the REDG mechanism. The radiation damage was verified by DLTS, revealing several new levels below EC in the range 0.4-0.80 eV, and by PL, showing the onset of D-center related luminescence band and concurrent increase of the nonradiative recombination rate.

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Silicon Carbide and Related Materials 2004

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Materials Science Forum (Volumes 483-485)

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327-330

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.327

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Online since:

May 2005

Authors:

Augustinas Galeckas, H. K.-Nielsen, Jan Linnros, Anders Hallén, Bengt Gunnar Svensson, P. Pirouz

Keywords:

DLTS, Imaging Spectroscopy, Ion Implantation, Photoluminescence (PL), Stacking Fault

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