Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers

Abstract:

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We investigated the structure of the in-grown stacking faults (SFs) in the 4H-SiC epilayers. The in-grown SFs exhibited the photoluminescence (PL) peaks representing phonon replicas with bandgap of 2.710 eV. The in-grown SFs were confirmed to be triangular-shaped by PL mapping and KOH etch pit observation. High-resolution TEM image showed that the in-grown SFs have an identical stacking sequence that differ from single or double Shockley SF. In addition, the density of the in-grown SF depended on growth conditions.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

323-326

DOI:

10.4028/www.scientific.net/MSF.483-485.323

Citation:

S. Izumi et al., "Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers", Materials Science Forum, Vols. 483-485, pp. 323-326, 2005

Online since:

May 2005

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$35.00

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