Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers

Syunsuke Izumi; Hidekazu Tsuchida; Takeshi Tawara; Isaho Kamata; Kunikaza Izumi

doi:10.4028/www.scientific.net/MSF.483-485.323

Paper Titles

[01-15] Grown 6H-SiC Bulk Crystals Investigated by High Energy Triple Axis X-Ray Diffraction
p.307

XRDT Study of Structural Defects of 6H-SiC Crystals
p.311

Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals
p.315

PVT-Growth and Characterization of Single Crystalline 3C-SiC on a (0001) 6H-SiC Substrate
p.319

Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers
p.323

Investigation of Stacking Fault Formation in Hydrogen Bombarded 4H-SiC
p.327

Intensity Ratio of the Doublet Signature of Excitons Bound to 3C-SiC Stacking Faults in a 4H-SiC Matrix
p.331

Specific Aspects of Type II Heteropolytype Stacking Faults in SiC
p.335

Optical Characterization of Deep Level Defects in SiC
p.341

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Structure of In-Grown Stacking Faults in the...

Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers

Abstract:

We investigated the structure of the in-grown stacking faults (SFs) in the 4H-SiC epilayers. The in-grown SFs exhibited the photoluminescence (PL) peaks representing phonon replicas with bandgap of 2.710 eV. The in-grown SFs were confirmed to be triangular-shaped by PL mapping and KOH etch pit observation. High-resolution TEM image showed that the in-grown SFs have an identical stacking sequence that differ from single or double Shockley SF. In addition, the density of the in-grown SF depended on growth conditions.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2004

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

323-326

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.323

Citation:

Cite this paper

Online since:

May 2005

Authors:

Syunsuke Izumi, Hidekazu Tsuchida, Takeshi Tawara, Isaho Kamata, Kunikaza Izumi

Keywords:

Epitaxial Growth, KOH Etching, Photoluminescence (PL), Stacking Fault, TEM

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] J. Q. Liu, M. Skowronski, C. Hallin, R. Söderholm and H. Lendenmenn: Appl. Phys. Lett., Vol. 80, No. 5 (2002), p.749.

Google Scholar

[2] J. Q. Liu, H. J. Chung, T. Kuhr, Q. Li and M. Skowronski: Appl. Phys. Lett., Vol. 80, No. 12 (2002), p.2111.

Google Scholar

[3] S. Bai, G. Wagner, E. Shishkin, W. J. Choyke, R. P. Devaty, M. Zhang, P. Pirouz and T. Kimoto: Mater. Sci. Forum Vol. 389-393 (2002), p.589.

DOI: 10.4028/www.scientific.net/msf.389-393.589

Google Scholar

[4] S. Izumi, I. Kamata, T. Tawara, H. Fujisawa and H. Tsuchida: Mater. Sci. Forum Vol. 457-460 (2004), p.1085.

Google Scholar

[5] A. Galeckas, J. Linnros and P. Pirouz: ICSCRM 2003, WeP4-5, (2003).

Google Scholar

[6] S.G. Sridhara, F. H. Carlsson, J. P. Bergman and E. Janzén: Appl. Phys. Lett. Vol. 79, No. 24 (2001), p.3944.

Google Scholar

[7] J.P. Bergman, A. Henry, H. Ru, M. Skowronski and E. Janzén: ECSCRM2002, We1-3, (2002) Fig. 6 In-grown SF density vs. epitaxial growth rate. 0 20 40 60 80 100 0 5 10 15 20 growth rate (µm/h) density of in-grown SF (cm -2 ).

Google Scholar