Specific Aspects of Type II Heteropolytype Stacking Faults in SiC
Focussing on the fine structure of excitons bound to large 2-dimensional stacking faults in a 4H-SiC matrix, we show that the intrinsic type-II nature of the band alignment, combined with the effect of the spontaneous polarization, should result in a double bound-exciton signature per well. Then, we present the first observation of a 3C-QW sandwiched between two higher energy bandgap polytypes in a 3C-SiC matrix.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
S. Juillaguet and J. Camassel, "Specific Aspects of Type II Heteropolytype Stacking Faults in SiC", Materials Science Forum, Vols. 483-485, pp. 335-340, 2005