Paper Titles

PVT-Growth and Characterization of Single Crystalline 3C-SiC on a (0001) 6H-SiC Substrate
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Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers
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Investigation of Stacking Fault Formation in Hydrogen Bombarded 4H-SiC
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Intensity Ratio of the Doublet Signature of Excitons Bound to 3C-SiC Stacking Faults in a 4H-SiC Matrix
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Specific Aspects of Type II Heteropolytype Stacking Faults in SiC
p.335

Optical Characterization of Deep Level Defects in SiC
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Optical Centres with Local Vibrational Modes Created by High Temperature Annealing of Electron Irradiated 4H and 6H Silicon Carbide
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Hyperfine Interaction of Nitrogen Donor in 4H-SiC Studied by Pulsed-ENDOR
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Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS
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HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Specific Aspects of Type II Heteropolytype...

Specific Aspects of Type II Heteropolytype Stacking Faults in SiC

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Abstract:

Focussing on the fine structure of excitons bound to large 2-dimensional stacking faults in a 4H-SiC matrix, we show that the intrinsic type-II nature of the band alignment, combined with the effect of the spontaneous polarization, should result in a double bound-exciton signature per well. Then, we present the first observation of a 3C-QW sandwiched between two higher energy bandgap polytypes in a 3C-SiC matrix.

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Silicon Carbide and Related Materials 2004

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Periodical:

Materials Science Forum (Volumes 483-485)

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335-340

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.335

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Online since:

May 2005

Authors:

Sandrine Juillaguet, Jean Camassel

Keywords:

3C-SiC, 4H-SiC, Quantum Well, Stacking Fault

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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