Specific Aspects of Type II Heteropolytype Stacking Faults in SiC

Abstract:

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Focussing on the fine structure of excitons bound to large 2-dimensional stacking faults in a 4H-SiC matrix, we show that the intrinsic type-II nature of the band alignment, combined with the effect of the spontaneous polarization, should result in a double bound-exciton signature per well. Then, we present the first observation of a 3C-QW sandwiched between two higher energy bandgap polytypes in a 3C-SiC matrix.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

335-340

DOI:

10.4028/www.scientific.net/MSF.483-485.335

Citation:

S. Juillaguet and J. Camassel, "Specific Aspects of Type II Heteropolytype Stacking Faults in SiC", Materials Science Forum, Vols. 483-485, pp. 335-340, 2005

Online since:

May 2005

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Price:

$35.00

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