Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS

Abstract:

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Midgap levels in 4H-SiC epilayers have been investigated by DLTS. The EH6/7 center (Ec-1.55 eV) is the dominant deep level as observed in DLTS spectra from n-type epilayers. The activation energy of EH6/7 center is unchanged regardless of applied electric fields, indicating that the charge state of EH6/7 center may be neutral after electron emission (acceptor-like). A DLTS spectrum for a p-type epilayer in the temperature range from 90 to 830 K is dominated by two peaks, D center and a deep trap at 1.49 eV from the valence band edge. Minority carrier traps have been also investigated by DLTS using pn diodes. Two minority carrier traps with activation energies of 1.0 eV and 1.43 eV have been detected.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

355-358

DOI:

10.4028/www.scientific.net/MSF.483-485.355

Citation:

K. Danno et al., "Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS", Materials Science Forum, Vols. 483-485, pp. 355-358, 2005

Online since:

May 2005

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Price:

$35.00

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