Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS

Katsunori Danno; Tsunenobu Kimoto; Hiroyuki Matsunami

doi:10.4028/www.scientific.net/MSF.483-485.355

Paper Titles

Specific Aspects of Type II Heteropolytype Stacking Faults in SiC
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Optical Characterization of Deep Level Defects in SiC
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Optical Centres with Local Vibrational Modes Created by High Temperature Annealing of Electron Irradiated 4H and 6H Silicon Carbide
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Hyperfine Interaction of Nitrogen Donor in 4H-SiC Studied by Pulsed-ENDOR
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Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS
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Electronic Levels Induced by Irradiation in 4H-Silicon Carbide
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Capacitance Spectroscopy Study of High Energy Electron Irradiated and Annealed 4H-SiC
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Recombination Enhanced Defect Annealing in 4H-SiC
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Room Temperature Steady State and Time Resolved PL Characterization of Ion Irradiation Induced Defects in 6H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Midgap Levels in As-Grown 4H-SiC Epilayers...

Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS

Abstract:

Midgap levels in 4H-SiC epilayers have been investigated by DLTS. The EH6/7 center (Ec-1.55 eV) is the dominant deep level as observed in DLTS spectra from n-type epilayers. The activation energy of EH6/7 center is unchanged regardless of applied electric fields, indicating that the charge state of EH6/7 center may be neutral after electron emission (acceptor-like). A DLTS spectrum for a p-type epilayer in the temperature range from 90 to 830 K is dominated by two peaks, D center and a deep trap at 1.49 eV from the valence band edge. Minority carrier traps have been also investigated by DLTS using pn diodes. Two minority carrier traps with activation energies of 1.0 eV and 1.43 eV have been detected.

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Silicon Carbide and Related Materials 2004

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

355-358

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.355

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Online since:

May 2005

Authors:

Katsunori Danno, Tsunenobu Kimoto, Hiroyuki Matsunami

Keywords:

Deep Level, DLTS, Intrinsic Defect, Midgap, PN Diode

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