Optical Centres with Local Vibrational Modes Created by High Temperature Annealing of Electron Irradiated 4H and 6H Silicon Carbide

John W. Steeds; S.A. Furkert; W. Sullivan; J.M. Hayes; Nicolas G. Wright

doi:10.4028/www.scientific.net/MSF.483-485.347

Paper Titles

Investigation of Stacking Fault Formation in Hydrogen Bombarded 4H-SiC
p.327

Intensity Ratio of the Doublet Signature of Excitons Bound to 3C-SiC Stacking Faults in a 4H-SiC Matrix
p.331

Specific Aspects of Type II Heteropolytype Stacking Faults in SiC
p.335

Optical Characterization of Deep Level Defects in SiC
p.341

Optical Centres with Local Vibrational Modes Created by High Temperature Annealing of Electron Irradiated 4H and 6H Silicon Carbide
p.347

Hyperfine Interaction of Nitrogen Donor in 4H-SiC Studied by Pulsed-ENDOR
p.351

Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS
p.355

Electronic Levels Induced by Irradiation in 4H-Silicon Carbide
p.359

Capacitance Spectroscopy Study of High Energy Electron Irradiated and Annealed 4H-SiC
p.365

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Optical Centres with Local Vibrational Modes Created by High Temperature Annealing of Electron Irradiated 4H and 6H Silicon Carbide

Abstract:

New results are presented concerning several optical centres having local vibrational modes in electron irradiated and annealed 4H and 6H SiC. Some of these centres are common to both polytypes, others have only been found in 6H SiC. They appear, typically, after annealing in the range 1000°C - 1300°C. Additional results have been obtained about mode splitting from 13C isotope enriched 6H SiC.