Optical Centres with Local Vibrational Modes Created by High Temperature Annealing of Electron Irradiated 4H and 6H Silicon Carbide

Abstract:

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New results are presented concerning several optical centres having local vibrational modes in electron irradiated and annealed 4H and 6H SiC. Some of these centres are common to both polytypes, others have only been found in 6H SiC. They appear, typically, after annealing in the range 1000°C - 1300°C. Additional results have been obtained about mode splitting from 13C isotope enriched 6H SiC.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

347-350

DOI:

10.4028/www.scientific.net/MSF.483-485.347

Citation:

J. W. Steeds et al., "Optical Centres with Local Vibrational Modes Created by High Temperature Annealing of Electron Irradiated 4H and 6H Silicon Carbide", Materials Science Forum, Vols. 483-485, pp. 347-350, 2005

Online since:

May 2005

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Price:

$35.00

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