Capacitance Spectroscopy Study of High Energy Electron Irradiated and Annealed 4H-SiC

Giovanni Alfieri; Edouard V. Monakhov; Margareta K. Linnarsson; Bengt Gunnar Svensson

doi:10.4028/www.scientific.net/MSF.483-485.365

Paper Titles

Optical Centres with Local Vibrational Modes Created by High Temperature Annealing of Electron Irradiated 4H and 6H Silicon Carbide
p.347

Hyperfine Interaction of Nitrogen Donor in 4H-SiC Studied by Pulsed-ENDOR
p.351

Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS
p.355

Electronic Levels Induced by Irradiation in 4H-Silicon Carbide
p.359

Capacitance Spectroscopy Study of High Energy Electron Irradiated and Annealed 4H-SiC
p.365

Recombination Enhanced Defect Annealing in 4H-SiC
p.369

Room Temperature Steady State and Time Resolved PL Characterization of Ion Irradiation Induced Defects in 6H-SiC
p.373

Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions
p.377

Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition
p.381

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Capacitance Spectroscopy Study of High Energy...

Capacitance Spectroscopy Study of High Energy Electron Irradiated and Annealed 4H-SiC

Abstract:

Deep level transient spectroscopy (DLTS) was employed to investigate the annealing behaviour and thermal stability of radiation induced defects in nitrogen doped 4H-SiC epitaxial layers, grown by chemical vapor deposition (CVD). The epilayers have been irradiated with 15 MeV electrons and an isochronal annealing series has been carried out. The measurements have been performed after each annealing step and six electron traps located in the energy band gap range of 0.42-1.6 eV below the conduction band edge (Ec) have been detected.

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Silicon Carbide and Related Materials 2004

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Materials Science Forum (Volumes 483-485)

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365-368

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https://doi.org/10.4028/www.scientific.net/MSF.483-485.365

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May 2005

Authors:

Giovanni Alfieri, Edouard V. Monakhov, Margareta K. Linnarsson, Bengt Gunnar Svensson

Keywords:

DLTS, Electron Irradiation

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