Capacitance Spectroscopy Study of High Energy Electron Irradiated and Annealed 4H-SiC

Abstract:

Article Preview

Deep level transient spectroscopy (DLTS) was employed to investigate the annealing behaviour and thermal stability of radiation induced defects in nitrogen doped 4H-SiC epitaxial layers, grown by chemical vapor deposition (CVD). The epilayers have been irradiated with 15 MeV electrons and an isochronal annealing series has been carried out. The measurements have been performed after each annealing step and six electron traps located in the energy band gap range of 0.42-1.6 eV below the conduction band edge (Ec) have been detected.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

365-368

DOI:

10.4028/www.scientific.net/MSF.483-485.365

Citation:

G. Alfieri et al., "Capacitance Spectroscopy Study of High Energy Electron Irradiated and Annealed 4H-SiC", Materials Science Forum, Vols. 483-485, pp. 365-368, 2005

Online since:

May 2005

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.