Hyperfine Interaction of Nitrogen Donor in 4H-SiC Studied by Pulsed-ENDOR

Nguyen Tien Son; Junichi Isoya; Satoshi Yamasaki; Erik Janzén

doi:10.4028/www.scientific.net/MSF.483-485.351

Paper Titles

Intensity Ratio of the Doublet Signature of Excitons Bound to 3C-SiC Stacking Faults in a 4H-SiC Matrix
p.331

Specific Aspects of Type II Heteropolytype Stacking Faults in SiC
p.335

Optical Characterization of Deep Level Defects in SiC
p.341

Optical Centres with Local Vibrational Modes Created by High Temperature Annealing of Electron Irradiated 4H and 6H Silicon Carbide
p.347

Hyperfine Interaction of Nitrogen Donor in 4H-SiC Studied by Pulsed-ENDOR
p.351

Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS
p.355

Electronic Levels Induced by Irradiation in 4H-Silicon Carbide
p.359

Capacitance Spectroscopy Study of High Energy Electron Irradiated and Annealed 4H-SiC
p.365

Recombination Enhanced Defect Annealing in 4H-SiC
p.369

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Hyperfine Interaction of Nitrogen Donor in 4H-SiC...

Hyperfine Interaction of Nitrogen Donor in 4H-SiC Studied by Pulsed-ENDOR

Abstract:

Shallow N donors in n-type 4H-SiC were studied by electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR). For the N donor at the cubic site (Nk) in 4H-SiC, the hyperfine (hf) constants of the interaction with the nearest neighbour (NN) 29Si atom along the c axis were determined as A = 41.07 MHz and A^ = 41.31 MHz. For other three NN Si atoms in the basal plane, the hf tensor has C1h symmetry and the principal values Axx = 5.94 MHz, Ayy = 5.06 MHz and Azz = 14.25 MHz. Our EPR and ENDOR observations unambiguously confirm that the N donor occupies the C site in 4H-SiC lattice and also reveal a considerable amount of the spin density of Nk (~23.9%) which was not obtained in previous studies.