Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition

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Materials Science Forum (Volumes 483-485)

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Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

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381-384

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M. Kato et al., "Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition", Materials Science Forum, Vols. 483-485, pp. 381-384, 2005

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May 2005

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