Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition

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Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

381-384

DOI:

10.4028/www.scientific.net/MSF.483-485.381

Citation:

M. Kato et al., "Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition", Materials Science Forum, Vols. 483-485, pp. 381-384, 2005

Online since:

May 2005

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