Improved Resolution of Epitaxial Thin Film Doping Using FTIR Reflectance Spectroscopy

Michael S. Mazzola; Swapna G. Sunkari; Janice Mazzola; Hrishikesh Das; Galyna Melnychuck; Yaroslav Koshka; Jeffery L. Wyatt; Jie Zhang

doi:10.4028/www.scientific.net/MSF.483-485.397

Paper Titles

Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition
p.381

Direct Experimental Comparison of the Effects of Electron Irradiation on the Charge Carrier Removal Rate in n-Type Silicon and Silicon Carbide
p.385

Study of Ion Induced Damage in 4H-SiC
p.389

Micro-Optical Characterization Study of Highly p-Type Doped SiC:Al Wafers
p.393

Improved Resolution of Epitaxial Thin Film Doping Using FTIR Reflectance Spectroscopy
p.397

Electrical Properties of p-Type In-Situ Doped vs. Al-Implanted 4H-SiC
p.401

Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay
p.405

Nonequilibrium Carrier Diffusion and Recombination in Heavily-Doped and Semi-Insulating Bulk HTCVD Grown 4H-SiC Crystals
p.409

Optical Studies of Nonequilibrium Carrier Dynamics in Highly Excited 4H-SiC Epitaxial Layers
p.413

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Improved Resolution of Epitaxial Thin Film Doping...

Improved Resolution of Epitaxial Thin Film Doping Using FTIR Reflectance Spectroscopy

Abstract:

Room temperature Fourier Transform Infrared Reflection Spectroscopy (FTIR) was used to investigate the thickness and Free Carrier Concentration (FCC) of heavily and lightly doped 4H and 6H-SiC epitaxial films. Multiple epitaxial layer stacks typical of lateral devices such as the MESFET were grown on 6H-SiC semi-insulating substrates. The estimation of thickness and FCC of the n-channel epi layer is improved by studying the Longitudinal Optical Phonon Plasmon Coupled Modes (LPP). A modelbased analysis of the experimental reflectance spectra from these samples is performed using a dielectric function that accounts for the phonon-photon coupling and plasmonphoton coupling. The value of the LPP+ mode frequency estimated from the reflectance spectrum in the range 600-1200 cm-1 is observed to increase in direct correlation with the electron free-carrier concentration.

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Silicon Carbide and Related Materials 2004

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Materials Science Forum (Volumes 483-485)

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397-400

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.397

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Online since:

May 2005

Authors:

Michael S. Mazzola, Swapna G. Sunkari, Janice Mazzola, Hrishikesh Das, Galyna Melnychuck, Yaroslav Koshka, Jeffery L. Wyatt, Jie Zhang

Keywords:

FTIR Reflectometry, LO-Phonon-Plasmon Coupled Modes (LPP), MESFET

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References

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