Improved Resolution of Epitaxial Thin Film Doping Using FTIR Reflectance Spectroscopy

Abstract:

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Room temperature Fourier Transform Infrared Reflection Spectroscopy (FTIR) was used to investigate the thickness and Free Carrier Concentration (FCC) of heavily and lightly doped 4H and 6H-SiC epitaxial films. Multiple epitaxial layer stacks typical of lateral devices such as the MESFET were grown on 6H-SiC semi-insulating substrates. The estimation of thickness and FCC of the n-channel epi layer is improved by studying the Longitudinal Optical Phonon Plasmon Coupled Modes (LPP). A modelbased analysis of the experimental reflectance spectra from these samples is performed using a dielectric function that accounts for the phonon-photon coupling and plasmonphoton coupling. The value of the LPP+ mode frequency estimated from the reflectance spectrum in the range 600-1200 cm-1 is observed to increase in direct correlation with the electron free-carrier concentration.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

397-400

DOI:

10.4028/www.scientific.net/MSF.483-485.397

Citation:

M. S. Mazzola et al., "Improved Resolution of Epitaxial Thin Film Doping Using FTIR Reflectance Spectroscopy", Materials Science Forum, Vols. 483-485, pp. 397-400, 2005

Online since:

May 2005

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Price:

$35.00

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