Direct Experimental Comparison of the Effects of Electron Irradiation on the Charge Carrier Removal Rate in n-Type Silicon and Silicon Carbide

Vitalii V. Kozlovski; Elena V. Bogdanova; Valentin V. Emtsev; Konstantin V. Emtsev; Alexander A. Lebedev; V.N. Lomasov

doi:10.4028/www.scientific.net/MSF.483-485.385

Paper Titles

Recombination Enhanced Defect Annealing in 4H-SiC
p.369

Room Temperature Steady State and Time Resolved PL Characterization of Ion Irradiation Induced Defects in 6H-SiC
p.373

Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions
p.377

Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition
p.381

Direct Experimental Comparison of the Effects of Electron Irradiation on the Charge Carrier Removal Rate in n-Type Silicon and Silicon Carbide
p.385

Study of Ion Induced Damage in 4H-SiC
p.389

Micro-Optical Characterization Study of Highly p-Type Doped SiC:Al Wafers
p.393

Improved Resolution of Epitaxial Thin Film Doping Using FTIR Reflectance Spectroscopy
p.397

Electrical Properties of p-Type In-Situ Doped vs. Al-Implanted 4H-SiC
p.401

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Direct Experimental Comparison of the Effects of...

Direct Experimental Comparison of the Effects of Electron Irradiation on the Charge Carrier Removal Rate in n-Type Silicon and Silicon Carbide

Abstract:

A comparison study of radiation damage in n-type silicon grown by the floating zone technique and n-type silicon carbide grown by the sublimation epitaxy technique was carried out for the first time under the same irradiation conditions. This comparison is drawn for an energy region of fast electrons at ≈ 1 MeV where Frenkel pairs as primary defects, i e the self-interstials bound to their parent vacant sites at a distance of a few lattice spacings, are produced most effectively. The removal rates of charge carriers in n-Si and n-SiC (4H and 6H) were found to be about 0.23 cm-1 and 0.015 cm-1, respectively. The possible reasons of the observed difference are briefly discussed.

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Silicon Carbide and Related Materials 2004

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Materials Science Forum (Volumes 483-485)

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385-388

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.385

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Online since:

May 2005

Authors:

Vitalii V. Kozlovski, Elena V. Bogdanova, Valentin V. Emtsev, Konstantin V. Emtsev, Alexander A. Lebedev, V.N. Lomasov

Keywords:

Electron Irradiation, Radiation Damage, Silicon, Silicon Carbide (SiC)

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References

[1] B.G. Svensson et al. Mater. Sci. Forum. Vol. 353-356 (2001), p.549.

Google Scholar

[2] A. Castaldini, A. Cavallini, F. Nava, P.G. Fuochi and P. Vanni. Mater. Sci. Forum. Vol. 443-436 ( 2003), p.439.

DOI: 10.4028/www.scientific.net/msf.433-436.439

Google Scholar

[3] A.A. Lebedev et al. J. Appl. Phys, vol. 88 (2000), p.6265.

Google Scholar

[4] G.D. Watkins and J.W. Corbett. Phys. Rev., vol. 134 (1964), p. A1359.

Google Scholar

[5] E.L. Elkin and G.D. Watkins. Phys. Rev., vol. 174 (1968), p.881.

Google Scholar

[6] G.D. Watkins and J.W. Corbett. Phys. Rev., vol. 121 (1961), p.1001.

Google Scholar

[7] J.W. Corbett and G.D. Watkins. Phys. Rev., vol. 138 (1965), p.555.

Google Scholar

[8] J.W. Corbett and J.C. Bourgoin: Point Defects in Solids, eds J.H. Crawford, Jr. and L.M. Slifkin (Plenum Press, New York and London 1975), pp.1-161.

Google Scholar

[9] S. Lazanu, I. Lazanu, E. Borchi and M. Bruzzi. Nucl. Instrum. Meth. A, vol. 485 (2002), p.768.

Google Scholar

[10] N.B. Strokan, A.M. Ivanov, N.S. Savkina, A.A. Lebedev, V.V. Kozlovskii, M. Syvajarvi, and R. R. Yakimova. Fiz. i Tekhn. Poluprovodn. (in Russian) (Semiconductors, (in English) MAIK Nauka/Interperiodika, The American Institute of Physics) vol. 38 (2004).

DOI: 10.1134/1.1777605

Google Scholar