Electrical Properties of p-Type In-Situ Doped vs. Al-Implanted 4H-SiC
We report a detailed investigation of the electrical properties of p-type 4H-SiC. In the range 100 K-800 K we show that, both, the temperature dependence of the hole concentration and Hall mobility is satisfactorily described using the relaxation time approximation. Performing a detailed comparison of in-situ vs. implantation doping, we evidence an incomplete activation of the dose (about 50 ±10 %) with apparition of a large number of compensating centres in the implanted layers.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
J. Pernot et al., "Electrical Properties of p-Type In-Situ Doped vs. Al-Implanted 4H-SiC ", Materials Science Forum, Vols. 483-485, pp. 401-404, 2005