Electrical Properties of p-Type In-Situ Doped vs. Al-Implanted 4H-SiC

Julien Pernot; Sylvie Contreras; Jean Camassel; Jean-Louis Robert

doi:10.4028/www.scientific.net/MSF.483-485.401

Paper Titles

Direct Experimental Comparison of the Effects of Electron Irradiation on the Charge Carrier Removal Rate in n-Type Silicon and Silicon Carbide
p.385

Study of Ion Induced Damage in 4H-SiC
p.389

Micro-Optical Characterization Study of Highly p-Type Doped SiC:Al Wafers
p.393

Improved Resolution of Epitaxial Thin Film Doping Using FTIR Reflectance Spectroscopy
p.397

Electrical Properties of p-Type In-Situ Doped vs. Al-Implanted 4H-SiC
p.401

Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay
p.405

Nonequilibrium Carrier Diffusion and Recombination in Heavily-Doped and Semi-Insulating Bulk HTCVD Grown 4H-SiC Crystals
p.409

Optical Studies of Nonequilibrium Carrier Dynamics in Highly Excited 4H-SiC Epitaxial Layers
p.413

Comparison of Electrically and Optically Determined Minority Carrier Lifetimes in 6H-SiC
p.417

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Electrical Properties of p-Type In-Situ Doped vs....

Electrical Properties of p-Type In-Situ Doped vs. Al-Implanted 4H-SiC

Abstract:

We report a detailed investigation of the electrical properties of p-type 4H-SiC. In the range 100 K-800 K we show that, both, the temperature dependence of the hole concentration and Hall mobility is satisfactorily described using the relaxation time approximation. Performing a detailed comparison of in-situ vs. implantation doping, we evidence an incomplete activation of the dose (about 50 ±10 %) with apparition of a large number of compensating centres in the implanted layers.

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Silicon Carbide and Related Materials 2004

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Materials Science Forum (Volumes 483-485)

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401-404

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https://doi.org/10.4028/www.scientific.net/MSF.483-485.401

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Online since:

May 2005

Authors:

Julien Pernot, Sylvie Contreras, Jean Camassel, Jean-Louis Robert

Keywords:

Aluminium Implantation, Hall-Effect Measurement, p-Type 4H-SiC

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[8] . Lines correspond to calculations: full ionisation (dashed line), zero compensation (solid line), ND/NA=10% (dotted line).

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