Comparison of Electrically and Optically Determined Minority Carrier Lifetimes in 6H-SiC

Abstract:

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Minority carrier (hole) lifetime investigations are conducted on identical 6H-SiC p+-n structures by electrical (reverse recovery, open circuit voltage decay) and optical (time-resolved photoluminescence) techniques. The p+-n diodes are fabricated by Al implantation. Depending on the particular analysis technique, the lifetime is determined either electrically in different regions of the p+-n diode or optically in the n-type 6H-SiC epilayer and results, therefore, in different values ranging from ≈10 ns to 2.5 µs.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

417-420

DOI:

10.4028/www.scientific.net/MSF.483-485.417

Citation:

S. A. Reshanov and G. Pensl, "Comparison of Electrically and Optically Determined Minority Carrier Lifetimes in 6H-SiC", Materials Science Forum, Vols. 483-485, pp. 417-420, 2005

Online since:

May 2005

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Price:

$35.00

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