Comparison of Electrically and Optically Determined Minority Carrier Lifetimes in 6H-SiC

Sergey A. Reshanov; Gerhard Pensl

doi:10.4028/www.scientific.net/MSF.483-485.417

Paper Titles

Electrical Properties of p-Type In-Situ Doped vs. Al-Implanted 4H-SiC
p.401

Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay
p.405

Nonequilibrium Carrier Diffusion and Recombination in Heavily-Doped and Semi-Insulating Bulk HTCVD Grown 4H-SiC Crystals
p.409

Optical Studies of Nonequilibrium Carrier Dynamics in Highly Excited 4H-SiC Epitaxial Layers
p.413

Comparison of Electrically and Optically Determined Minority Carrier Lifetimes in 6H-SiC
p.417

Electrical Characterisation of Heavily Al Doped 4H-SiC Layer Grown by Vapour-Liquid-Solid Epitaxy in Al-Si Melt
p.421

Evaluation of On-State Resistance and Boron-Related Levels in n-Type 4H-SiC
p.425

Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes
p.429

Infrared Gratings Based on SiC/Si-Heterostructures
p.433

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Comparison of Electrically and Optically...

Comparison of Electrically and Optically Determined Minority Carrier Lifetimes in 6H-SiC

Abstract:

Minority carrier (hole) lifetime investigations are conducted on identical 6H-SiC p+-n structures by electrical (reverse recovery, open circuit voltage decay) and optical (time-resolved photoluminescence) techniques. The p+-n diodes are fabricated by Al implantation. Depending on the particular analysis technique, the lifetime is determined either electrically in different regions of the p+-n diode or optically in the n-type 6H-SiC epilayer and results, therefore, in different values ranging from ≈10 ns to 2.5 µs.