Comparison of Electrically and Optically Determined Minority Carrier Lifetimes in 6H-SiC
Minority carrier (hole) lifetime investigations are conducted on identical 6H-SiC p+-n structures by electrical (reverse recovery, open circuit voltage decay) and optical (time-resolved photoluminescence) techniques. The p+-n diodes are fabricated by Al implantation. Depending on the particular analysis technique, the lifetime is determined either electrically in different regions of the p+-n diode or optically in the n-type 6H-SiC epilayer and results, therefore, in different values ranging from ≈10 ns to 2.5 µs.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
S. A. Reshanov and G. Pensl, "Comparison of Electrically and Optically Determined Minority Carrier Lifetimes in 6H-SiC", Materials Science Forum, Vols. 483-485, pp. 417-420, 2005